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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2806-2809 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Acceptor depth distributions measured using differential capitance-voltage profiling, and atom depth distributions measured using secondary ion mass spectrometry are reported for aluminum implanted in the random and the 〈100〉, 〈110〉, and 〈111〉 directions of the silicon crystal in the ion energy range from 5 to 300 keV, and show agreement between the two measurements for selected energies and with one prior work. Values of range parameters, maximum channeling ranges, and electronic stopping Se are reported.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 422-424 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here experimental evidence of electron oscillation within the toroidal-section magnetic duct of a filtered vacuum arc plasma source. Our results clearly demonstrate that electrons can oscillate inside the duct under the combined effects of the electric and magnetic fields. In another experiment, we observe that, under the influence of the electron motion, the trajectories of the plasma ions are more or less unchanged except in the intensity when the Bilek plate is biased. Finally, our time-of-flight experiments show that the effects due to collisional scattering between plasma ions and oscillating electrons are masked by those associated with the metal plasma flow through the duct, and collisional scattering does not give rise to an increase of the mean charge state of the plasma ions. We conclude that the application of a bias voltage to the duct not only perturbs the ions but also influences the plasma electrons. Our results demonstrate that electrons at the central axis are one of the major reasons leading to improved plasma transport through the duct. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1023-1025 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated that a buried gettering layer can be formed with a single MeV ion implantation without damaging the top device region. The strong gettering efficiency of carbon implant and its linear dependence on dose are confirmed. A surprising feature of the carbon implanted layers is that no extended defects are formed after annealing for implant doses up to 2×1016 cm−2 at 3 MeV, compared to a layer of small precipitates and dislocations in the case of oxygen implantation. It is suggested that the carbon-related gettering centers are point defects or their clusters.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 889-891 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering effects of implanted carbon for Au and Cu are studied and compared with the gettering effects of implanted oxygen, nitrogen, BF2, neon, and argon. It is demonstrated that implanted carbon forms strong gettering centers in silicon which are an order of magnitude more effective than implanted oxygen. The amount of gettered Au by implanted carbon is found to be approximately linear with dose in the range from 1015 to 1016 cm−2 and no thermal instability is observed with annealing up to 12 h at 1000 °C. It is found that the gettering effect of carbon is reduced by the addition of oxygen. This indicates that the strong gettering effect of carbon is not due to carbon-enhanced oxygen precipitation but a phenomenon of its own.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 44-49 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model utilizing cold, unmagnetized, and collisionless fluid ions as well as Boltzmann electrons is used to comprehensively investigate the sheath expansion into a translationally invariant large bore in the presence of an auxiliary electrode during plasma immersion ion implantation (PIII) of a cylindrical bore sample. The governing equation of ion continuity, ion motion, and Poisson's equation are solved by using a numerical finite difference method for different cylindrical bore radii, auxiliary electrode radii, and voltage rise times. The ion density and ion impact energy at the cylindrical inner surface, as well as the ion energy distribution, maximum ion impact energy, and average ion impact energy for the various cases are obtained. Our results show a dramatic improvement in the impact energy when an auxiliary electrode is used and the recommended normalized auxiliary electrode radius is in the range of 0.1–0.3. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1035-1037 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal evolution of the plasma sheath in a small cylindrical bore in the presence of an auxiliary electrode is determined for different electrode radii. The ion density, velocity, flux, dose, ion energy distribution, and average impact energy are calculated by solving Poisson's Equation and the equations of ion motion and continuity using finite difference methods. The particle-in-cell method is also used to confirm the validity of the data. Our results indicate that more ions will attain high impact energy when the auxiliary electrode radius is increased, but the dose will decrease. Our results suggest that the normalized auxiliary electrode radius should range from 0.10 to 0.30 in order to maximize the dose and produce a larger number of ions with higher impact energy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1135-1137 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Coimplantation of carbon and one of the group II acceptors Mg, Zn, or Cd, was performed in GaAs using doses of 5×1014 cm−2, and the resulting p-type electrical activity was studied. Carbon and group II coimplantation offers a means of maintaining the III–V stoichiometry, which is known to be beneficial for both carbon and group II activation. The group II implantation profiles show reduced diffusivity from the balance in stoichiometry the carbon coimplantation provides. The group II elements Zn and Cd create substantial implantation damage and therefore help assist carbon activation by supplying the necessary abundance of As vacancies. The Mg coimplantation, because of the light mass of the ion, does not create a significant amount of lattice damage at this dose and consequently the implanted carbon remains inactive, which results in reduced conductivity. This investigation differs from past group III and carbon coimplantation studies because both of the coimplanted species, the group II and carbon, contribute to p-type conductivity as well as help to maintain the stoichiometry. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 19 (2000), S. 1883-1885 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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