American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 1614-1615
AIP Digital Archive
A 1.55 μm multiple quantum well laser heteroepitaxially grown on Si substrate operates under the severe aging condition of the light output of 5 mW/facet at 50 °C. The laser has been operating for more than 7000 h. The threshold current and the slope efficiency of the laser on Si at 20 °C are 32 mA and 0.19 W/A, respectively. The maximum operation temperature is above 80 °C. © 1997 American Institute of Physics.
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