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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4183-4188 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examined chemical state of fluorine doped silica glasses and its thermal behavior. Almost all of the fluorine atoms were found to have the ≡SiF structure with Raman spectroscopy. No optical absorption in the region of 3–9 eV was detected in the glass. When the glasses were annealed in a He atmosphere at 1000 °C, absorption bands peaking at 7.6 and 4.3 eV appeared. These two bands are attributed to the ≡SiSi≡ structure and to F2 molecules, respectively. We proposed a thermal decomposition reaction expressed as ≡SiF+FSi≡→≡SiSi≡+F2. The concentrations of the reaction products, ≡SiSi≡ and F2, estimated from the absorption cross sections were equal to each other within the errors of measurements. We also examined the radiation damage with γ ray. The concentration of E' center was almost the same for the same dose in silica glasses having different concentrations of FSi≡ and ≡SiSi≡. We suggest that FSi≡ and ≡SiSi≡ were found to be stable for γ-irradiation at room temperature.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 69-74 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silica soots were sintered under a reducing ambient to study the generation mechanism of the oxygen-deficient-type defects in silica glasses. Glasses sintered under H2/He gas mixtures or vacuum were prepared with an intent to produce oxygen-deficient centers. Two optical-absorption bands were generated in the silica glasses sintered under the H2/He gas mixtures. One was 5.17-eV absorption band and the other was an absorption tail near the Urbach tail of silica glasses. Both absorptions were attributed to the silicon lone pair center (SLPC). On the other hand, the other type of reduced silica glasses were prepared in the vacuum ambient. Three kinds of absorption bands could be detected clearly: one was peaking at 5.17 eV, another showed only its shoulder near the Urbach tail, (both were also attributed to the SLPC) and the third was peaking at 6.7 eV and was attributed to a SiSiSi structure. Fabricated in higher volatile ambient under vacuum, the color of the sample showed a smoky black and generated broad absorption band peaking at 5.1 eV. This band is tentatively attributed to the optical absorption due to excitation from the inner shell of silicon.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2663-2665 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous 2CdO⋅GeO2 thin films (optical band gap determined by a Tauc plot; 3.4 eV) prepared by rf sputtering were implanted with H+ or Li+ ions to a dose of 2×1016 cm−2. Direct current conductivities in the specimens at 300 K were increased from 3×10−9 S cm−1 to ∼10 S cm−1 after the implantation. The conductivities in these implanted specimens remained almost constant down to 77 K. No deleterious coloring was perceived after implantation. The Hall mobilities (conduction type; n) in the implanted specimens at ∼300 K were ∼5 cm2 V−1 s−1, which are larger by several orders of magnitude than those in existing amorphous semiconductors. Such a large mobility indicates that the electronic state near the bottom of the conduction band of this amorphous material is extended. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2237-2240 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature and the origin of the 11.9 mT hyperfine doublets in electron spin resonance spectrum observed in 9SiO2:GeO2 fibers were examined. When fibers were heated in hydrogen atmosphere at 100 °C, the intensity of the doublet increased. When gamma-ray irradiated, the intensity drastically increased. The photoluminescence bands peaking at 1.91 eV (650 nm) and 1.83 eV (680 nm) excited with Ar ion laser operated at 488 nm were also observed in the treated fibers with the doublets. It should be noted that the relation between the photoluminescence and the doublets was found. The intensities of the photoluminescence peaking at 1.83 eV and the 11.9 mT ESR doublets have accumulation. The germyl radical was proposed as their structural model. The origin of the photoluminescence peaking at 1.91 eV was tentatively proposed as the small silicon particles with hydrogen impurities generated in the fibers.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4696-4699 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural imperfections in silica glasses with an optical absorption peak at 3.8 eV were studied. The 3.8-eV peak was assigned to Cl2 molecules trapped in the glasses. The peak absorption was increased with increasing partial pressure of chlorine for sintering. The peak and its full width at half maxima were the same as those of Cl2 molecules in the gas phase. ≡SiOH was generated in the glasses by annealing in H2 ambient. After irradiation with a KrF excimer laser (5 eV), an absorption peak at 4.8 eV and red emission were observed. The properties were the same as the photochemical reaction of O2 molecules in the gas phase. We proposed that O2 molecules were trapped in the glass network when silica glasses were sintered under Cl2 ambient. The reaction is expressed as ≡SiOH+HOSi≡+Cl2→≡SiCl+ClSi≡+H2O↑+1/2O2 (trapped).
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1849-1852 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chlorine incorporated into silica glasses by sintering porous soot rods under Cl2/He atmosphere or by fabricating with plasma methods were found to be mostly as ≡SiCl, which gives rise to an optical absorption tail above (approximately-equal-to)7.5 eV. The cross section of the optical absorption at (approximately-equal-to)7.77 eV (160 nm) was found to be 1.14×1020 cm2. This value was almost the same as that of ≡SiCl in SiCl4 molecule in the gas phase. A minor fraction (10−3∼10−1) was found to be present as Cl2 molecule, which gives the absorption band at 3.8 eV.
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3584-3591 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silica glasses were prepared by three different techniques, vapor phase axial deposition method, oxidation of SiCl4 in O2-H2 flame, and O2 or O2-Ar plasma method with changing preparation conditions. This was done with the expectation that O2 molecules dissolve in the glasses with different concentrations by using a wide variety of preparation conditions. O2 molecules were found to be dissolved in the order of 1017 cm−3 and give an optical absorption above 7 eV, the so-called Schumann–Runge bands. The estimations of concentrations were done by using a molar absorption coefficient of ≡SiOH at 0.46 eV formed under a reaction of O2 with H2 diffusing from atmosphere at high temperature, 1/2 O2+H2+≡Si−O−Si≡ →2≡Si−OH. The concentration directly estimated from the absorption intensity at above 7 eV was consistent with those estimated from the IR band of ≡SiOH. On the ArF excimer laser irradiation of the glasses which possess the absorption band above 7 eV, the well-known absorption band at 4.8 eV was induced. This band was assigned to the Hartley bands of the O3 molecule. The reaction model was proposed to be O2(trapped)→2O(hν〉5.1 eV) and O+O2→O3(trapped). On exciting the induced 4.8 eV band, a photoluminescence at 1.9 eV was observed. The photoluminescence excitation spectrum of the band was agreed closely with the quantum yield curve of O(1D) on the excitation of Hartley bands of ozone. This suggests that the luminescence is due to the radiative relaxation of O(1D) to O(3P). The total reaction was proposed to be O3→O(1D)+O2 and O(1D)→O(3P)+1.9 eV.
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1644-1649 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We prepared silica glasses having various concentrations of chlorine, fluorine, hydrogen (SiO2−x), and oxygen (SiO2+x) to examine the precursors of paramagnetic centers induced by γ rays. In the case of glasses sintered under chlorine and hydrogen ambients, the concentration of the E' center induced by γ-ray irradiation scaled with the partial pressure of chlorine and hydrogen. In contrast, the E' center was suppressed in glasses doped with fluorine. Stress in the glasses was also found to enhance formation of the E' center. Planar ring structures in the glass are influenced by stress and are proposed as precursors to the E' center.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2713-2718 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nine SiO2 :GeO2 glasses were heated under an H2 or O2 atmosphere. In the H2 atmosphere optical absorption bands were induced at vacuum ultraviolet (VUV) (〉6.22 eV), 5.14 eV (242 nm), 3.82 eV (325 nm), and 0.452 eV (2.75 μm). The intensities of all the induced bands are in linear relation with each other. Heat treatment in the O2 ambient reduced the intensities of the optical absorption bands. A model for the reaction of the glasses with H2 molecules and a structural model of the center responsible for the UV-VUV absorption was proposed.
    Type of Medium: Electronic Resource
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  • 20
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It was reported [H. Hosono et al., Appl. Phys. Lett. 65, 1632 (1994)] that nanometer-sized crystalline (nc) Ge colloid particles were formed by implantation of protons into 0.1 GeO2–0.9 SiO2 glasses at room temperature. The depth profiles of Ge colloids and the density of Si–OH or Ge–OH created by the implantation were measured and compared with those of energy deposition in order to examine the formation mechanism of Ge colloids by proton implantation. The depth region of nc-Ge particles was found to correspond to the overlapped region between the OH distribution and the peak of electronic energy deposition. Transmission electron microscopic observation revealed that the size of Ge colloid particles created by proton implantation was close to that of GeO2-rich particles occurring in the substrate glasses. These results indicate that GeO2-rich particles are converted into Ge particles by a combined effect of the electronic excitation and the chemical reaction of implanted protons. A mechanism was proposed consisting of displacement of bridging oxygen into interstitials by electronic excitation and subsequent trapping of the oxygen interstitials by a formation of OH groups. © 1997 American Institute of Physics.
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