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  • 11
    Electronic Resource
    Electronic Resource
    Formation of ultrathin, buried oxides in Si by O+ ion implantation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 674-676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique is presented for forming a silicon-on-insulator material with an ultrathin buried oxide by utilizing the separation by implantation of oxygen or SIMOX method. It overcomes the problem of oxide continuity encountered during standard SIMOX processing when the O+-implanted dose is scaled down to decrease the thickness of the buried oxide below ∼0.1 μm. To promote the formation of ultrathin buried oxides (during post-implantation annealing), the implantation process was modified to produce a microstructure which promotes coalescence of the oxygen into a continuous layer. This was accomplished by slightly modifying the standard ((approximately-greater-than)500 °C) process so that the final increment of the dose is implanted near room temperature. This dose is chosen to selectively amorphize the region near the ion's range which will yield a high-defective layer during subsequent annealing. It is shown that this layer, which can consist of polysilicon, provides a template or guide upon which the oxide forms. Buried oxides prepared in this way are shown to be continuous and without Si inclusions while the standard process yields a broken layer with severe discontinuities. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117802
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  • 12
    Electronic Resource
    Electronic Resource
    Reduction of interfacial tunnel defects in silicon due to chemical vapor deposition of tungsten (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 602-604 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is reported for reducing tunnel formation in p+-n Si, and a correlation is shown between tunnel defects and junction leakage. 11B+-implanted Si annealed for 30 min at 900 °C in N2 and subsequently deposited with W forms a high density of filamentary tunnel defects extending on the order of 0.1 μm from the W/Si interface. Reverse-bias leakage of 0.33-μm-deep junctions is −90 nA/cm2 at −5 V and the forward-bias ideality is 1.24 over eight decades of current. By contrast, for 11B+-implanted Si oxidized for 7 min in steam, tunnels if present are less than 0.01 μm in length. The reverse-bias leakage is −0.3 nA/cm2 at −5 V and the forward-bias ideality is 1.00. The 2×1019 cm−3 interfacial carrier concentration is the same for both deposits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98360
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  • 13
    Electronic Resource
    Electronic Resource
    Passivation of n and p dopants in ion-implanted GaAs by a 2D+ plasma (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 385-387 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong n but weak p-carrier passivation was observed when Si- and Mg-implanted/annealed GaAs samples were exposed to a 2D plasma under identical conditions. Even though a discrete band of dislocation loops was present in both the samples, the 2D distribution in the two cases was remarkably different. In the Si-implanted sample the 2D followed the carrier distribution, whereas in the Mg-implanted sample it followed the distribution of dislocation loops. Phenomenological mechanisms of 2D interaction with dopants/dislocations in GaAs are postulated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104642
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  • 14
    Electronic Resource
    Electronic Resource
    Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1190-1192 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier concentrations at a level of (approximately-greater-than)1×1019 cm−3 were achieved when Si-capped GaAs underwent rapid thermal oxidation (RTO) in Ar+0.1% O2 ambient at 850–1000 °C for 10–60 s followed by rapid thermal annealing (RTA) in Ar ambient at 850–950 °C. Carrier concentrations in the RTO only samples were in the range of 2–5×1018 cm−3. Kinetic data on the diffusion of Si under RTO and RTO+RTA conditions are presented. The enhancement in the electrical activation of the diffused Si during RTA appears to be partly due to its local atomic rearrangement and partly due to redistribution in the GaAs. Ohmic contacts to the doped layer were made using Au-Ge-Ni alloy and contact resistances of (approximately-less-than)0.1 Ω mm were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104361
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  • 15
    Electronic Resource
    Electronic Resource
    Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3200-3202 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement (×2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are implanted at doses of ≤1×1013 cm−2, and subsequent annealing of the co-implanted GaAs is performed under capless or proximity cap conditions. A model considering gettering of the oxygen present in the bulk Czochralski-grown GaAs to the implanted Al is invoked to explain the observed activation enhancement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110198
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  • 16
    Electronic Resource
    Electronic Resource
    Boron redistribution in arsenic-implanted silicon and short-channel effects in metal–oxide–semiconductor field effect transistors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3038-3040 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When a high dose of As is implanted (e.g., 25 keV, 3×1015 cm−2) into B-doped Si and the sample is subsequently annealed at 900 °C/5 min, pronounced segregation of the B into the implanted region occurs. This creates a B-depleted region beyond the As profile. It is demonstrated that the B segregation is driven primarily by the implantation induced damage rather than by As-B chemical and/or by electric field effects. The B segregation is nearly complete after a relatively low temperature ((approximately-less-than)600 °C/30 min) anneal. Two-dimensional device simulations show that the B depletion observed here can account for (approximately-equal-to)50 mV threshold voltage roll off (at a drain bias of 0.1 V) in a Si metal–oxide–semiconductor field effect transistor of 0.2 μm gate length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108002
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  • 17
    Electronic Resource
    Electronic Resource
    Effect of F co-implant during annealing of Be-implanted GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 569-571 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: F+ co-implantation at different doses and energies was performed into GaAs already implanted with Be+ at high dose (1015 cm−2) and low energy (20 keV), in order to reduce the beryllium diffusion during post-implant annealing. The redistribution behavior of Be and associated electrical effects were studied by secondary-ion mass spectrometry, transmission electron microscopy (TEM), Hall effect measurements, and current-voltage profiling. Be outdiffusion was reduced by co-implantation of F; more than 80% of the implanted Be was retained during rapid thermal annealing up to 850 °C. The dose and energy of the F implant strongly influenced Be electrical activation efficiency. High activation, up to 48.5%, was obtained when F was co-implanted at high dose (1015 cm−2) and low energy (10 keV). Hole profiles shown reduced electrical activation in the region where F and Be profiles overlapped and TEM studies indicated the formation of {111} coherent plates, possibly BeF2 precipitates, in the same region. The reduction of Be outdiffusion in F co-implanted samples led to high activation after annealing, and was believed to be due to chemical interaction between Be and F.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103623
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  • 18
    Electronic Resource
    Electronic Resource
    Oxidation induced AlAs/GaAs superlattice disordering (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1235-1237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid interdiffusion occurs at thin-film SiGe/GaAs interfaces when samples are annealed in oxygen containing ambients. Secondary ion mass spectroscopy and AlAs/GaAs superlattice disordering indicate that Ge and/or Si diffuse to depths of 200 nm after oxidation at 800 °C for 30 min. Negligible diffusion is detected for anneals in forming gas. Dissociation, out-diffusion, and oxidation of the GaAs substrate at the surface are associated with the phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107416
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  • 19
    Electronic Resource
    Electronic Resource
    Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2540-2542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved solid phase epitaxy of thin amorphous Si layers on GaAs using in situ plasma processing and subsequent annealing. High-resolution transmission electron microscopy of the SiO2/Si/GaAs structure shows that a Si layer (approximately-equal-to)20 A(ring) thick epitaxially crystallizes on GaAs after annealing at (approximately-equal-to)570 °C in N2. Metal-oxide-semiconductor capacitors fabricated on these structures confirm the high quality of these interfaces. By comparing a high- frequency (100 kHz) capacitance-voltage curve with a quasi-static one, interface state densities as low as 4×1012 eV−1/cm−2 were measured on both n- and p-type GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104820
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  • 20
    Electronic Resource
    Electronic Resource
    Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1129-1132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated using rapid thermal annealing that the electrical activation of Si+-implanted GaAs capped with a plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SixNy) layer requires longer annealing times compared to capless annealing. The SIMS profiles of 2H from the GaAs samples onto which SixNy caps were deposited using deuterated ammonia showed that deuterium atoms diffuse readily into the implanted region during PECVD. The improvement in the electrical activation of the capped samples with annealing time correlates directly with decreasing concentration of the 2H in the GaAs. It is postulated that the H atoms diffusing into GaAs during PECVD are trapped by the implantation-induced damage and the delay in electrical activation corresponds to the time required for the release of the trapped H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103512
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