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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5320-5325 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new interferometer has been developed for the accurate determination of the density of a silicon crystal, in which a single-crystal silicon sphere of nearly perfect geometry is placed in a Fabry–Perot etalon of accurately known plate distance, and the diameters are obtained by measuring the two gaps between the etalon and the adjacent surface of the sphere. A new method is used to measure the sum of the length of the two gaps by scanning the etalon against the sphere. Two wavelengths, 633 nm from a frequency-stabilized He–Ne laser and 441 nm from a free-running He–Cd laser, are used to determine the order of interference by applying the method of exact fractions. The diameter of about 94 mm has been measured with a resolution of 0.5 nm. Diameter measurements from uniformly distributed directions have shown that the mean diameter has been determined with a standard deviation of 8.6 nm, corresponding to 0.28 ppm in the volume determination. The total uncertainty of the volume is estimated to be 0.34 ppm. Effects of a thin oxide layer and impurities on the bulk density are discussed.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6745-6747 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed very large tunneling magnetoresistance (TMR) in Ga1−xMnxAs/AlAs/Ga1−xMnxAs ferromagnetic semiconductor tunnel junctions. A TMR ratio as high as 75% was obtained in a junction with a thin (1.5 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR ratio decreased when the applied magnetic field direction was along the [11¯0] and [110]. This anisotropic TMR was found to be explained by the single-domain theory assuming cubic magnetic anisotropy with the easy axis of 〈100〉, which is induced by the zincblende-type Ga1−xMnxAs crystal structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6695-6697 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have succeeded in growing MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures on GaAs(111)B substrates by molecular-beam epitaxy. Double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. Magnetoresistance (MR) curves in current-in-plane geometry showed the spin-valve effect, which was caused by the change of the magnetic alignment of the two ferromagnetic MnAs layers from parallel to antiparallel orientation. Temperature dependence of the MR was also investigated. We infer that the positive temperature coefficient of the MR by the spin-valve effect suggests the heat (carrier) induced interlayer exchange coupling. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transconductance oscillations were observed for silicon-on-insulator metal–oxide–semiconductor field-effect transistors with 50 nm channel length and 6 nm Si-layer thickness in the temperature range of 39–50 K. By investigating the temperature dependence of the oscillations it was found that the oscillations were caused by two reasons. One reason is the roughness at the Si/insulator interface responsible for the low-gate-voltage oscillations. The roughness results in different thicknesses of the Si layer along the channel, causing different quantized energy levels, which act as barriers for carriers moving in the channel. The other reason is the tunneling through the potential barrier at the p/n junctions between the contacts and the channel, which is responsible for the high-gate-voltage oscillations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7281-7283 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated semiconductor-based magnetic superlattices (SLs) containing GaAs:MnAs granular material in which MnAs nanoclusters are embedded in GaAs, and have characterized their structural, optical, and magneto-optical properties. SLs consisting of GaAs:MnAs and AlAs are shown to have good crystalline quality and excellent compatibility with nonmagnetic GaAs/AlAs heterostructures. The optical transmission properties were improved in the SLs, while keeping the strong magneto-optical properties of GaAs:MnAs. We used these magnetic SLs in a semiconductor-based magnetic microcavity as the central magnetic layer, and its optical transmission was found to have improved compared with our previous multilayer structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In negative-ion-based neutral beam injection (NBI) systems for the large helical device (LHD), beams must be transported over 13 m from the H− ion source to the injection port. In order to clarify beam deflection by the electron deflection magnets set in a beam extraction grid (EG) and to control beam transport direction, we analyzed beam trajectories. The physics of the beam deflection was studied with theoretical calculations and the deflection angle was estimated by 3D beam trajectory simulation. The evaluated deflection angle was 10 mrad in the opposite direction of the electron deflection when the maximum magnetic field on the beam axis was 480 G and the beam energy was 83.2 keV. The electrostatic lens effect on the beam deflection at the EG exit was estimated to be larger than the magnetic field effect. This deflection was reduced to 2 mrad by a 1.3 mm displacement of the grounded grid (GG) aperture, a result in agreement with experimental results of a 1/3-scale model for the LHD ion source. The maximum GG aperture displacement of the LHD ion source was designed as 3.4 mm to reduce the deflection and to focus multibeamlets using the simulation. We have developed the ion source with this design. The targeted performance is a production of H− beams of 40 A (40 mA/cm2), 180 keV. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 980-982 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An electron cyclotron resonance (ECR) plasma production method using electron cyclotron wave is presented. This method is not subjected to any cutoff-density scaling, and is capable of generating dense plasmas far beyond the critical density of an ordinary wave. It has been demonstrated that a plasma density more than 1013 cm−3 (argon) is obtained with a low frequency (2.45 GHz) and low power (11 kW) microwave. The experimental results and the application to plasma neutralizer are described. The experimental verification of superpermeability of Nb membrane in a plasma environment is in progress to develop a plasma neutralizer with Nb-membrane wall. The design parameters of Nb-membrane pump are presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4911-4915 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A volume production type microwave negative ion source has been developed for negative ion beam processes such as ion implantation and ion beam deposition, etc. In order to increase efficiency of negative oxygen ion production, we employed a double plasma cell system in which two plasma cells were connected to each other. A high density primary plasma was generated in the first plasma cell with 2.45 GHz microwave power and negative ions were effectively generated in the second plasma cell. A filter magnetic field of about 0.1 T was applied on the second plasma cell to prevent diffusion of high energy electrons from the first plasma cell. Oxygen negative ion beams were generated by this method and the maximum oxygen (O−) ion current of 142 μA (current density: 325 μA/cm2) was extracted continuously from the ion source at an extraction voltage of 30 kV and a microwave power of 500 W. This value was three orders larger than that obtained by a single plasma cell system without the filter magnetic field. Molecular oxygen ions (O−2 and O−3) were also obtained at percentages of about 20% and 2% of the major O− ion intensity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1125-1127 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Filamentless negative ion beam production was investigated with a compact microwave ion source (2.45 GHz). One of the key points for negative ion production is the magnetic configuration. A magnetic filter field to lower electron temperature was generated in a negative ion production cell, which was shielded magnetically from a discharge cell with a magnetic field to couple microwave to plasma. Production of H− beam was studied with this source. H− was extracted through a grid slit (2×16 mm2) from plasma and accelerated to 20–40 keV. H− beam current was measured with a Faraday cup after magnetic mass separation. Continuous H− beam current of 73 μA (0.23 mA/cm2) was obtained with a magnetron power of 700 W. H− beam current was increased around 1.4 times by adding Xe gas to the H2 gas. Other negative ion species, which have a potential for applications to industrial ion beam processing with little charge-up problem, were also investigated. Carbon and hydrocarbon negative ion beams were produced using boron alkoxide (B(OCH3)3) and methane. C2H2− beams (22 μA) were obtained with the alkoxide. C2−(1.6 μA), C2H−(2.3 μA), C2H2−(0.6 μA), and H−(6.9 μA) beams were produced with methane. SiF4 and BF3 were used to generate F−, Si−, SiF3− and B− beams. Beam currents of these ion species were 17, 0.25, 1.5, and 0.03 μA, respectively. © 2000 American Institute of Physics.
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2541-2546 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An intense negative hydrogen ion source has been developed, which has a strong external magnetic filter field in the wide area of 35 cm×62 cm produced by a pair of permanent magnet rows located at 35.4 cm separation. The filter strength is 70 G in the center and the line-integrated filter strength is 850 G cm, which keeps the low electron temperature in the extraction region. Strong cusp magnetic field, 1.8 kG on the chamber surface, is generated for improvement of the plasma confinement. These resulted in the high arc efficiency at the low operational gas pressure. 16.2 A of H− ion current with the energy of 47 keV was obtained at the arc efficiency of 0.1 A/kW at the gas pressure of 3.8 mTorr in the cesium-mode operation. The magnetic field in the extraction gap is also strong, 450 G, for the electron suppression. The ratio of the extraction current to the negative ion current was less than 2.2 at the gas pressure of 3 mTorr. The two-stage acceleration was tested, and 13.6 A of H− ion beam was accelerated to 125 keV. © 1995 American Institute of Physics.
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