ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract We report the deposition of Si-N films by multipulse excimer laser (λ = 308 nm, τFWHM = 30 ns) ablation of Si wafers placed in a slow flow of NH3 in the pressure range (1 μbar-1 mbar). The films are deposited on to a Si collector placed parallel to the Si target. We succeeded in depositing pure amorphous Si3N4 films at a pressure of 1 mbar of NH3. The deposition rate reached a maximum value of 0.2–0.3 nm per pulse. At lower pressures, the deposited films consist of a fine mixture of three amorphous phases (amorphous stoichiometric silicon nitride, amorphous non-stoichiometric silicon nitride and amorphous silicon). The amorphous silicon is prevalent in films deposited at a pressure of several to several tens of μbars. Droplets of polycrystalline α-Si are sometimes visible on the film surface. The experimental evidence, is analysed with a view to elucidating the participation in the chemical synthesis of the three main stages of the process: the substance expulsion from the target by laser ablation, the transition through the gas of the expulsed substance and it's final impact on the collector. We conclude that silicon nitride is mostly synthesized during the impact on the collector of the flow of the ablated substance.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00355991
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