Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 393-395
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have observed low-threshold lasing in a GaAs single quantum-well vertical microcavity. At 4 K the quantum-well emission linewidth is reduced, and the coupling efficiency β of the spontaneous emission to the lasing mode is improved. The laser threshold pump power obtained for a 200 A(ring) GaAs quantum well pumped by a continuous wave Ti:sapphire laser was 5 mW, corresponding to 85 μW absorbed power. We have compared the experimental results with the theoretical prediction, and estimated the value of β to be 10−2.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107893
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