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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of thin CdS films grown by the gradient recrystallization and growth technique (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1375-1377 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time the growth of polycrystalline CdS films by the gradient recrystallization and growth technique on silicon, quartz, and glass substrates is reported. X-ray diffraction, photoluminescence, scanning electron microscopy, and microprobe studies were used for their characterization. This preliminary study shows that this technique is suitable for growing CdS films with larger grain sizes than those obtained by conventional evaporation methods. The photoluminescence studies show that the emission spectrum of the films deposited on silicon is comparable to single-crystal CdS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346689
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  • 2
    Electronic Resource
    Electronic Resource
    Nanoindentation on AlGaN thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6773-6778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hardness and Young's modulus were measured in AlGaN thin films with different Al content, using a nanoindentation technique. Hardness slightly decreases with increasing Al content, ranging from 20.2 to 19.5 GPa for Al content from 0.09 to 0.27, respectively. No significant variations of Young's modulus were observed. The resulting value of Young's modulus is 375 GPa. Discontinuities in load–displacement curves were found, which are associated with dislocation nucleation. The threshold load for this discontinuity depends on the conditions of the nanoindentation test. Below the threshold load, the sample surface flexes elastically in response to the indenter contact and the displacements recover completely when the sample is unloaded. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371726
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  • 3
    Electronic Resource
    Electronic Resource
    Scaling and interleaving of subsystem Lyapunov exponents for spatio-temporal systems (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 9 (1999), S. 466-482 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The computation of the entire Lyapunov spectrum for extended dynamical systems is a very time consuming task. If the system is in a chaotic spatio-temporal regime it is possible to approximately reconstruct the Lyapunov spectrum from the spectrum of a subsystem by a suitable rescaling in a very cost effective way. We compute the Lyapunov spectrum for the subsystem by truncating the original Jacobian without modifying the original dynamics and thus taking into account only a portion of the information of the entire system. In doing so we notice that the Lyapunov spectra for consecutive subsystem sizes are interleaved and we discuss the possible ways in which this may arise. We also present a new rescaling method, which gives a significantly better fit to the original Lyapunov spectrum. We evaluate the performance of our rescaling method by comparing it to the conventional rescaling (dividing by the relative subsystem volume) for one- and two-dimensional lattices in spatio-temporal chaotic regimes. Finally, we use the new rescaling to approximate quantities derived from the Lyapunov spectrum (largest Lyapunov exponent, Lyapunov dimension, and Kolmogorov–Sinai entropy), finding better convergence as the subsystem size is increased than with conventional rescaling. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.166420
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  • 4
    Electronic Resource
    Electronic Resource
    Enhancement of electrical conductivity in α-Al2O3 crystals doped with magnesium (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3942-3951 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct current and alternating current electrical measurements were performed to investigate the electrical conductivity of α-Al2O3:Mg samples with different concentrations of [Mg]0 centers (Mg ions each with a trapped hole) in the temperature interval 250–800 K. The concentration of [Mg]0 centers was monitored by the optical absorption peak at 2.56 eV. These centers were produced by oxidation at temperatures above 1050 K. The formation rate of [Mg]0 centers depends on the previous thermal history of the sample in either reducing or oxidizing atmosphere. At low electrical fields, dc measurements reveal blocking contacts. At high fields, the I–V characteristic is similar to that of a diode (corresponding to a blocking contact at one side of the sample and an ohmic contact at the other side) connected in series with the bulk resistance of the sample. Steady electroluminescence is emitted at the negative electrode when a current in excess of (approximate)10 μA passes through the sample, indicating that the majority of carriers are holes. Low voltage ac measurements show that the equivalent circuit for the sample is the bulk resistance in series with the junction capacitance (representing the blocking contacts) connected in parallel with a capacitance, which represents the dielectric constant of the sample. The values determined for the bulk resistance in both dc and ac experiments are in good agreement. The electrical conductivity of Al2O3:Mg crystals increases linearly with the concentration of [Mg]0 centers, regardless of the amount of other impurities also present in the crystals, and is four times higher in the c(parallel) than in the c⊥ direction. The conductivity is thermally activated with an activation energy of 0.68 eV, which is independent of: (1) the [Mg]0 content, (2) the crystallographic orientation, and (3) the concentration of other impurities. These results favor the small-polaron-motion mechanism. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402669
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  • 5
    Electronic Resource
    Electronic Resource
    Cryofibrinogenaemia with a good response to stanozolol (2000)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 25 (2000), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We report a 63-year-old patient with an IgA-kappa multiple myeloma in complete remission who developed necrotic lesions on both ears and papular, purpuric lesions on his legs and cheeks. Initial differential diagnosis included perniosis and skin necrosis secondary to interferon treatment but subsequent investigation revealed cryofibrinogenaemia as the underlying cause. Stanozolol therapy, 2 mg/12 h, achieved a complete clearance of the skin lesions. Cryofibrinogenaemia is a disease which can be under-diagnosed unless it is considered in the work-up of a patient with thrombotic skin lesions. Stanozolol is useful as first line therapy for this disorder.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2000.00722.x
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  • 6
    Electronic Resource
    Electronic Resource
    Palmoplantar pustulosis associated with gastric Helicobacter pylori infection (2002)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 27 (2002), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2002.01102_6.x
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanism of action of polymeric aurintricarboxylic acid, a potent inhibitor of protein-nucleic acid interactions (1980)
    s.l. : American Chemical Society
    Biochemistry 19 (1980), S. 4299-4303 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00559a023
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  • 8
    Electronic Resource
    Electronic Resource
    Gallium arsenide field-effect transistor by close spaced vapor transport epitaxy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2004-2006 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time gallium arsenide field-effect transistors have been made using epitaxial layers grown by the close spaced vapor transport technique (CSVT). The layers were unintentionally doped and their free-carrier concentration was adjusted through the growth parameters to around 1017 cm−3. For the growth of the layers, water vapor was used as transporting gas. This transistor confirms the capability of the simplest and most inexpensive epitaxial technique (CSVT) for growing device quality gallium arsenide epitaxial layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98274
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  • 9
    Electronic Resource
    Electronic Resource
    Analytical electron microscopic studies and positron lifetime measurements in Al-doped MgO crystals (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 429-433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: MgO crystals intentionally doped with Al were characterized by analytical electron microscopic examinations and positron lifetime measurements. Large spinel (MgO Al2O3) precipitates were observed in samples with high contents of Al. A well-defined crystallographic relationship between the precipitates and the matrix was found. The characteristics of positron lifetime spectra appear to depend on the valence state of the different impurities in the MgO lattice suggesting that positrons are trapped by vacancy impurity complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339816
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  • 10
    Electronic Resource
    Electronic Resource
    Safety of long-term treatment with cyclosporin A in resistant chronic plaque psoriasis: a retrospective case series (2004)
    Oxford, UK : Blackwell Publishing Ltd.
    Journal of the European Academy of Dermatology and Venereology 18 (2004), S. 0 
    Details
    ISSN: 1468-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background  An intermittent short course of cyclosporin A (CyA) therapy is a good choice in the treatment of severe psoriasis. Nevertheless, some severe or resistant patients might benefit from long-term treatment. Adverse effects of long-term use of CyA are investigated and the results are compared with the literature.Patients and methods  A retrospective study of adverse effects of CyA treatment in a group of 53 patients suffering from psoriasis. The mean treatment time was 31.4 ± 23.2 months with a minimum of 4 months to a maximum of 95 months, with very few short interruptions of treatment (from 2 to 5 months in five patients).Results  The group consisted of 29 women and 24 men, ranging in age from 18 to 65 years, with an average age of 44.49 years. Arterial hypertension appeared in 45.3% of patients during treatment. Pharmacological treatment was required in 32% of these patients to control the condition. Serum creatinine levels were transiently elevated in 11.3% of the cases, but withdrawal of treatment was required in none of them.Discussion  Long-term CyA treatment might be necessary in some patients and this study shows that it could be sustained with a close follow-up. This involves regular visits depending on each patient, as well as common test protocol and clinical evaluation. In conclusion, this retrospective study seems to confirm the relative safety of long-term CyA treatment when patients are adequately monitored.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1468-3083.2004.00877.x
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