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  • 1
    Electronic Resource
    Electronic Resource
    Anomalous misfit strain relaxation in ultrathin YBa2Cu3O7−δ epitaxial films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3653-3662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin YBa2Cu3O7−δ epitaxial films were successfully grown in situ on (001) SrTiO3 and MgO substrates by means of ozone-incorporating activated reactive evaporation. The x-ray-diffraction study was carefully examined to determine the structural properties of the grown films. Excellent crystallinity with no interfacial disorders was revealed by the appearance of the Laue oscillations. It was found that in a well lattice-matched YBa2Cu3O7−δ/SrTiO3 system, the crystallinity was deteriorated due to defect introduction at the critical layer thickness hc ( ∼ 130 A(ring)). Interestingly, also in a poorly lattice-matched YBa2Cu3O7−δ/MgO system, excellent crystallinity was revealed even at above hc ( 〈 24 A(ring)). This implies that an anomalous misfit relaxation process exists in the YBa2Cu3O7−δ/MgO system. In such a system, no crystal imperfection of the MgO substrate caused by defect introduction was elucidated by the grazing incidence x-ray scattering, which indicated that the MgO substrate did not contribute to the anomalous misfit relaxation. The anomalous growth manner was also found in YBa2Cu3O7−δ/MgO according to surface morphology investigations. Below 40 A(ring)( (approximately-greater-than) hc), island nucleation growth was found. Above 40 A(ring), it was observed that an atomically smooth surface was obtained and the crystallinity was simultaneously improved. It is suggested that YBa2Cu3O7−δ possesses an anomalous misfit relaxation mechanism, and that especially in the growth on MgO, it couples with the characteristic growth behavior at the initial stage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348513
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  • 2
    Electronic Resource
    Electronic Resource
    Characteristics of an optically pumped titanium vapor laser (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1460-1464 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristics of an optically pumped titanium vapor laser have been investigated on the 3d2 4s(4P)4p 3D01−3d3(4F)4Rs 3F2 transition at 551.4 nm. An excimer laser of 14 mJ/pulse for vaporization and an N2 laser of 5 mJ/pulse for optical pumping are employed. The laser output energy is measured as a function of buffer gas pressure, delay time, output mirror reflectivity, pumping laser intensity, and vaporizing laser intensity. The possibility of lasing on the other transitions is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346674
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement of a population inversion on the 551.4-nm transition in an optically pumped Ti vapor laser (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 67-72 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A population inversion density on the Ti 551.4-nm (3D01−3F2) transition in a N2 -laser-pumped Ti-vapor laser has been estimated from measurements of an optical gain on the laser transition, length of the laser medium, and temperature in the vapor to determine the linewidth. Ti vapor is generated by irradiation of a pulsed YAG laser light of 1 J/pulse energy and then the Ti atoms are optically pumped by a N2 laser of 0.2 mJ/cm2 intensity. It has been experimentally observed that, in pure Ti vapor, the population of Ti (3d24s2 3F2) is about 8×1013/cm3, the temperature in the vapor is about 9000 K, the population inversion on the 551.4-nm transition is about 1.5×1011/cm3, and the absorption cross section of the N2 -laser light at 337.044 nm by a Ti atom is 3.0×10−15 cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347658
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  • 4
    Electronic Resource
    Electronic Resource
    Visible laser action in N2-laser-pumped Ti vapor (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5378-5380 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti vapor is produced in a He buffer gas. Ti metal is irradiated by a pulsed YAG laser, and its vapor is optically pumped by a N2 laser at 337 nm. Laser lines at 551.4, 472.3, and 471.0 nm from the Ti 3D01 level which is connected to the ground state by the 337-nm resonance line. Laser lines are reported for the first time at 551.5, 551.3, 431.5, and 547.4 nm from the 3D02, 3D03, or 3G05 levels which are not optically connected to the ground state by the 337 nm line. The laser transitions from the 3D02, 3D03, or 3G05 levels are observed only in a He-Ti mixture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347038
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  • 5
    Electronic Resource
    Electronic Resource
    Defects in 30 keV Er+-implanted SiO2/Si studied by positron annihilation and cathodoluminescence (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 237-242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects in SiO2 (48 nm)/Si induced by 30 keV Er ion implantation were studied by positron annihilation. Depth-selective information on defects for samples implanted with doses of 3.0×1014 and 1.5×1015 Er/cm2 was obtained by a variable-energy positron beam by measuring Doppler broadening of positron annihilation γ rays as a function of incident positron energy. Comparison of the results by Doppler broadening with those by electron spin resonance after annealing indicates that the types of defects (which predominantly exist in the SiO2 layer) depend on implantation dose. The annealing temperature dependence of positron data is compared with that of the cathodoluminescence intensity at 1.54 μm, and the possible effect of defects on luminescence intensity is discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371948
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  • 6
    Electronic Resource
    Electronic Resource
    In situ growth of superconducting Nd-Ce-Cu-O thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 677-679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Nd-Ce-Cu-O thin films were epitaxially grown on SrTiO3 (100) by activated reactive evaporation. As-grown films showed the metallic temperature dependence of the resistivity and superconducting transition at 12.5 K (R=0). The remarkable parallel shift of the onset temperature of the resistive transition in the magnetic fields was observed. Ginzburg–Landau coherence lengths along the c axis and in the basal plane are 7 and 96 A(ring), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103309
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  • 7
    Electronic Resource
    Electronic Resource
    Preparation of ferroelectric BaTiO3 thin films by activated reactive evaporation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 527-529 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric BaTiO3 thin films were directly and epitaxially grown on SrTiO3 single crystal and epitaxial Pt film substrates by activated reactive evaporation. The substrate temperature was around 600 °C. For (100) oriented as-grown films, a typical ferroelectric hysteresis loop and a maximum of dielectric constant at about 115 °C were observed. The resistivity was as high as 109 Ω cm and the breakdown voltage was 2.7 MV/cm for as-grown BaTiO3 films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103300
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  • 8
    Electronic Resource
    Electronic Resource
    Tunneling measurements on superconductor/insulator/superconductor junctions using single-crystal YBa2Cu3O7−x thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 683-685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have, for the first time, made quasi-particle tunneling measurements on a YBa2Cu3O7−x(001)/Y2O3 (001)/YBa2 Cu3 O7−x (001)junction, which was epitaxially grown on a MgO(100) substrate in an in-situ process. Both layers of YBa2 Cu3 O7−x showed the same superconducting transition of Tc end =86 K with ΔT(R=10–90%)=1.5 K. Quasi-particle tunneling in the direction perpendicular to the Cu-O planes was measured. A gap parameter Δ(4.5 K) of 9.0±0.2 meV and a value of 2Δ/kTc of 3.5+0.4−0.6 were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103311
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  • 9
    Electronic Resource
    Electronic Resource
    Tunnel junctions using oxide superconducting thin films epitaxially grown on SrTiO3 (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2689-2691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Normal-metal/insulator/superconductor (NIS) junctions were fabricated using thin films of YBa2Cu3O7−x (YBCO) or ErBa2Cu3O7−x. These were epitaxially grown on single-crystal SrTiO3 by the activated reactive evaporation method. For some NIS junctions prepared on SrTiO3 (110) substrates, we observed multipeaks in the differential conductance versus voltage curve. NIS junctions using single-crystal YBCO films on SrTiO3 (100) showed a set of peaks, from which we obtained a gap parameter of 11.5±1.5 meV at 4.4 K and a coupling constant of 3.2±0.4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100546
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  • 10
    Electronic Resource
    Electronic Resource
    Amplification by stimulated emission from optically pumped nickel vapor in an ultraviolet region (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amplification by stimulated emission has been observed from an optically pumped nickel vapor on the transitions at 347 and 381 nm. Nickel vapor was produced by direct laser vaporization, and the nickel atoms were optically pumped by a N2 laser at 337 nm. The amplification factor at 347 nm reaches a maximum after the amplification factor at 381 nm reaches a maximum. The maximum amplification factors are 1.62 and 1.69, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104065
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