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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7573-7575 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A strong negative transconductance is investigated in in-plane-gate transistors written by focused-ion-beam implantation in the two-dimensional electron gas in modulation-doped AlGaAs/GaAs heterostructures. This occurs in a configuration where two in-plane gates G1 and G2 used to control the current through a channel lying between them are biased with different voltages Vg1 and Vg2. When the voltage Vg2〈0 is held constant, the current through the channel can be reduced to zero by increasing Vg1 beyond a critical value. In an earlier study this effect was attributed to velocity modulation. It is found, however, that in this regime Vg1 causes a very small current Ig2 to flow across gate G2. It is observed that changes in Id are correlated to changes in Ig2 and thus conclude that Ig2 is responsible for the strong negative transconductance.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2477-2480 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigate the collimation factor of narrow channels defined by focused-ion-beam insulation writing in the highly mobile two-dimensional electron gas of an AlGaAs/GaAs heterostructure. We show that the degree of collimation can be enhanced by appropriate channel design. Additional boundary roughness caused by selective implantation of ions along the channel boundary considerably increases the collimation.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 588-590 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Two-dimensional electron or hole gases (2DEG or 2DHG) are confined at the same interface in an undoped heterostructure by an electric field generated by a top gate. The combination of ion-implanted ohmic regions, an undoped heterostructure with superlattice barriers, and a metal gate is used to fabricate structures by a conventional process without self-alignment. High-quality 2DEG and 2DHG with a carrier density up to 8×1011 cm−2 are formed with a small gate leakage current. Switching between 2DEG and 2DHG at the same heterointerface is achieved by changing the sign of the gate voltage. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: CoCrPt/TiCr perpendicular recording media having independently optimized nucleation and growth conditions have been prepared by changing the argon pressure during sputter deposition of each film. A low argon pressure CoCrPt nucleation layer produces strong c-axis perpendicular orientation that can be maintained during continued CoCrPt deposition at high argon pressure. The two-layer media combines increased particle separation from high pressure growth and strong orientation to produce higher signal to noise ratio than either high pressure or low pressure single layer CoCrPt media. TiCr underlayers, despite poor orientation and a noncolumnar structure, improve CoCrPt c- axis perpendicular orientation. Low argon pressure during TiCr deposition maximizes CoCrPt orientation. A TiCr bilayer having a low pressure nucleation layer followed by a high pressure growth layer improves performance of the subsequent CoCrPt layer. A TiCr bilayer having a high pressure growth layer followed by a thin low pressure template produces even greater recording performance enhancement. This media has Hc=2560 Oe, D50=90 kfci and S0/Nd at 240 kfci=4.0. An identical CoCrPt layer deposited on the low pressure TiCr underlayer has Hc=1850 Oe, D50=80 kfci and S0/Nd at 240 kfci=2.4. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5664-5666 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The possibility of ultrahigh-density recording higher than 10 Gb/in.2 with perpendicular magnetic recording is investigated by computer simulation for a ring-type head and single-layer medium combination. A nucleation model is used as a media model because it incorporates a nucleation site, which causes irreversible magnetization switching. Fundamental read–write characteristics are found to be entirely different from those of longitudinal recording. Recorded magnetization strongly depends on head field strength; the maximum magnetization appears around the head field strength of media coercivity, and beyond this the recorded magnetization decreases abruptly. Spacing loss in the recording process also depends on head field strength and recording density. However, saturation recording can be attained even at an ultrahigh recording density of 600 kFCI with a spacing of 30 nm. Also, a higher signal-to-noise ratio than in longitudinal recording can be obtained by introducing weak intergrain exchange interaction with a relatively large grain size in the media film. This suggests that perpendicular magnetic recording is stable in thermal fluctuation. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2132-2134 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ferromagnetism at room temperature has been found in Mn/C/Si films prepared by sequential deposition of these elements at a substrate temperature about 360 °C by vacuum evaporation. The saturation magnetization increases rapidly with the carbon quantity, and it is about 250 emu/cc for a film with a nominal structure of Mn(6 nm)/C(0.5 nm)/Si(6 nm). The magnetization measurements at low temperatures show that the magnetic moment per ferromagnetic Mn atom corresponds to more than 1.2 Bohr magnetons. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A high precision atomic polarimeter system for the use in beam-foil spectroscopy experiments with a few keV/amu heavy-ion beams has been developed. The polarimeter measures the circular polarization of fluorescences from the beam ion in-flight after the beam–foil interaction. The present system has two identical such polarimeters in both sides of the beam axis to reduce the systematic errors such due to the fluctuations of beam current, background and so on. A successful use of an ultrathin carbon foil (1.5 μg/cm2), which was durable for several hours against a few hundred nA beam irradiation, enabled the beam–foil experiments with such low energy heavy-ion beams. A performance test of the polarimeter system was carried out in the tilted foil experiments with a 1.7 keV/amu 14N+ beam. The atomic polarization was observed for the transition 1s22s22p3p 1D→1s22s22p3p 1P, whose fluorescence wavelength is 399.5 nm, in the N+ ion (N II). The polarization was approximately −2% for the tilt angle of −40° and showed monotone increasing with increasing tilt angle up to +2% for +40°. The polarization at 0° was (0.002±0.25)%, which is highly consistent with the expected polarization of 0%. This result indicates the high reliability of the present polarimeter system. This is the first tilted-foil experiment at such low beam energy. The present experimental technique will be very useful for studies of the polarization mechanism of the beam–foil interaction. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6890-6892 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Annealing effects of CoCrTa and CoCrPt perpendicular magnetic recording media have been investigated. The coercivity and the squareness increase by postannealing when the annealing temperature is higher than 450 °C and CoCr35/TiCr10 dual underlayer is employed. The CoCr35 underlayer suppresses Ti diffusion to the magnetic layer and provides Cr up to the magnetic layer. The signal-to-noise ratio is improved and the magnetization irregularity diameter observed by magnetic force microscopy (MFM) decreases by the postannealing treatment. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 570-578 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The physical properties (transition energy, oscillator strength, linewidth, binding energy, and reduced effective mass) of room temperature excitons in compressively strained InGaAs/InGaAlAs multiquantum-well (MQW) structures as a function of the well width have been investigated for the first time by both absorption measurements and photomodulated transmittance measurements. Photomodulated transmittance spectroscopy has been successfully applied to clearly reveal critical transition points. Measured transition energies are in good agreement with a model which includes the heavy hole and light hole splitting due to the strain. For well widths of 2.5–7.5 nm, oscillator strengths are smaller for the strained layer MQWs than for the lattice-matched MQWs by 35%–45%. This is due to the larger exciton radius for the strained MQWs resulting from smaller in-plane reduced effective masses (0.031–0.038m0), which are 65% of those of the lattice-matched MQWs.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3022-3028 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The transport characteristics of in-plane-gated wires, in which the conducting two-dimensional electron gas (2DEG) channel and the 2DEG gates are separated by focused Ga-ion-beam scanned lines, are studied at low temperature (1.5 K). They are understood as a combination of the normal field-effect-transistor (FET) characteristics and a peculiar resistance jump at the channel pinch-off threshold. In the normal FET region, the depletion region spreading is gradually controlled by a gate voltage applied to the in-plane gates. The channel conductance variation by the gate voltage is explained by the change of the effective channel width rather than by the change of the carrier density. The variable range of the effective wire width is equal to or less than 0.6 μm in the experiments. In spite of this small controllable value, the channel can be pinched off up to W=10 μm with a gate leakage current of less than 1 nA. The pinch off of the wide wires always occurs together with a resistance jump at the threshold. These characteristics are explained by the drastic extension of the depletion region for the case that a small gate leakage occurs through the AlGaAs (Si) layer but not through the two-dimensional electron gas at the heterointerface. This resistance jump produces an interesting negative drain conductance (drain current/drain voltage) in the drain-voltage–drain-current characteristics.
    Materialart: Digitale Medien
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