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  • 1
    Digitale Medien
    Digitale Medien
    Substitutional phosphorus doping of diamond by ion implantation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2566-2569 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the lattice sites of ion-implanted radioactive 33P in natural IIa diamond using the emission channeling technique. 33P ions were implanted at room temperature with 30 keV and a rather low dose of 1011 cm−2 and the implanted samples were annealed in vacuum to 1200 °C. From the channeling effects of the emitted β− particles measured for all principal axial directions we obtain a fraction of 70±10% of substitutional P, a vanishing fraction on tetrahedral interstitial sites and a 30% random fraction. Possible displacements of the P atoms from ideal substitutional sites must be below 0.2 Å. This demonstrates that P is a substitutional impurity in diamond and efficient substitutional P doping of diamond can be accomplished by a conventional implantation and annealing procedure if low implantation doses are chosen. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363919
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  • 2
    Digitale Medien
    Digitale Medien
    Lattice sites of arsenic ions implanted in diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5180-5182 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The lattice sites of As ions implanted in diamond and the annealing of implantation damage were investigated in emission channeling measurements. A dose of 1.0×1013 cm−2 73Se ions was implanted into IIa diamond at 300 K with an energy of 60 keV. 73Se (t12=7.1 h) decays to 73As (t1/2=80 d), which in turn decays to excited states in 73Ge. Channeling effects were measured on conversion electrons emitted in the 73Ge decay. Annealing studies in the range 873–1673 K showed an annealing stage of the implantation damage setting in at 1100 K. Comparison of the measured effects with simulations based on the dynamical theory of electron diffraction showed that after annealing at temperatures above 1100 K, 55(5)% of the implanted ions were located on substitutional lattice sites. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359753
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  • 3
    Digitale Medien
    Digitale Medien
    Cubic boron nitride thin film heteroepitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3248-3254 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this study we investigate the possibility of nucleating nanocrystalline cubic boron nitride (c-BN) thin films directly onto suitable substrates without the soft turbostratic BN (t-BN) interlayer that is usually observed. This would open a path to the epitaxial growth of c-BN films which is essential particularly for practicable applications in electronic devices. Appropriate substrates are required to exhibit a lattice that matches the c-BN crystallite structure, survives the ion bombardment imperative for c-BN film formation, and is not disturbed by the development of a heterogeneous interface layer. In accordance with these criteria, monocrystalline AlN is selected and employed as a potential substrate for direct c-BN film growth using mass selected ion beam deposition. A detailed examination of the BN/AlN interface microstructure by cross-sectional high-resolution transmission electron microscopy reveals that the AlN crystallinity is indeed retained, with no amorphous layer next to the BN film as commonly observed on Si substrates. Nanocrystalline BN grains with the cubic, and, more frequently, with the wurtzitic structure are found in direct contact with certain regions of the rugged AlN substrate, covering about one-third of its entire surface with no mediating t-BN or other interface layer. The c-BN and w-BN growth areas are textured and exhibit definite preferential orientation relationships with the faceted AlN substrate surface. The consequences of these findings for the understanding of the role of the t-BN interlayer in c-BN film nucleation are discussed. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1392957
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  • 4
    Digitale Medien
    Digitale Medien
    Lattice site location studies of ion implanted 8Li in GaN (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3085-3089 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The lattice sites of ion implanted Li atoms in GaN were studied as a function of implantation temperature between room temperature and 770 K. We measured the channeling and blocking patterns of α-particles emitted in the radioactive decay of implanted 8Li ions to determine the Li lattice sites. Below 700 K Li atoms occupy mainly interstitial sites in the center of the c-axis hexagons at positions c/4 and 3c/4, where c is the lattice constant in c-axis direction. Around 700 K Li starts to diffuse and presumably interacts with vacancies created in the implantation process. This leads to the formation of substitutional Li above 700 K. An activation energy of about 1.7 eV for interstitial Li diffusion was determined. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368463
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  • 5
    Digitale Medien
    Digitale Medien
    Lattice site location of ion-implanted 8Li in Silicon Carbide (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1046-1052 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The lattice sites of ion-implanted Li atoms in 6H-, 4H-, and 3C-SiC were studied. Radioactive 8Li ions (t1/2=0.84 s) were implanted with 60 keV into the crystalline SiC samples, and the channeling and blocking effects of 1.6 MeV alpha particles emitted in the decay were measured to determine the Li lattice sites. The alpha emission channeling spectra measured along different crystallographic directions reveal that Li occupies mainly interstitial sites with tetrahedral symmetry, centered along the c-axis atom rows in the hexagonal lattices. In the cubic 3C-SiC structure, Li is located on tetrahedral interstitial sites as well. For 6H-SiC, the implantation temperature was varied between 200 and 823 K without observing significant changes in the emission channeling spectra. Thus, Li diffusion or Li defect interaction resulting in a lattice site change does not occur in this temperature regime. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1425442
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  • 6
    Digitale Medien
    Digitale Medien
    Ion beam deposition of fluorinated amorphous carbon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4237-4245 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the growth and the properties of (t)a-C:F films prepared by the deposition of mass separated 12C+ and 19F+ ions as a function of the F concentration. The films are always strongly F deficient due to the formation of volatile F2 and CFx molecules during the deposition process. A maximum F content of about 25 at. % is obtained for an ion charge ratio of C+:F+=1:1. The observed mechanical, optical, electrical, and structural properties as well as the thermal stability of the films are strongly influenced by the F content. A three step progression of the film structure is evident for increasing F concentration: the amorphous three-dimensional network of tetrahedrally bonded carbon atoms of pure carbon films (ta-C) with diamondlike properties is doped for very low F concentrations (ta-C:F). A further increase of the F content results first in transformation to a graphitelike amorphous structure (a-C:F) before the deposited films become porous and to a polymerlike one for the highest F content. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1404419
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  • 7
    Digitale Medien
    Digitale Medien
    Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2149-2157 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The recovery of structural defects in gallium nitride (GaN) and aluminum nitride (AlN) after implantation of 111In+ and 89Sr+ in the dose range (0.1–3) 1013 cm−2 and ion energies of 60–400 keV has been investigated as a function of annealing temperature with emission channeling (EC) and perturbed γγ angular correlation spectroscopy. The implanted In and Sr atoms occupied substitutional sites in heavily perturbed surroundings of point defects after room temperature implantation. No amorphization of the lattice structure was observed. The point defects could be partly removed after annealing to 1473 K for 10–30 min. Lattice site occupation of implanted light alkalis, 24Na+ in GaN and AlN as well as 8Li+ in AlN, were also determined by EC as a function of implantation and annealing temperature. These atoms occupied mainly interstitial sites at room temperature. Lithium diffusion and the occupation of substitutional sites was observed in GaN and AlN at implantation temperatures above 700 K. A lattice site change was also observed for sodium in AlN, but not in GaN after annealing to 1073 K for 10 min. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372154
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  • 8
    Digitale Medien
    Digitale Medien
    Comment on "On the mechanism of the cubic phase formation in the boron nitride thin-film systems" [Appl. Phys. Lett. 79, 353 (2001)] (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1306-1307 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1452796
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  • 9
    Digitale Medien
    Digitale Medien
    Superhard, conductive coatings for atomic force microscopy cantilevers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3053-3055 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Boron carbide thin films were grown by mass selected ion beam deposition using low energy 11B+ and 12C+ ions at room temperature. The amorphous films exhibit any desired stoichiometry controlled by the ion charge ratio B+/C+. Films with a stoichiometry of B4C showed the optimal combination of a high mechanical strength and a low electrical resistivity for the coating of atomic force microscopy (AFM) silicon cantilevers. The properties of such AFM tips were evaluated and simultaneous topography and Kelvin mode AFM measurements with high lateral resolution were performed on the systems (i) Au nanoparticles on a p-WS2 surface and (ii) conducting/superconducting YBa2Cu3O7−x. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1415354
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  • 10
    Digitale Medien
    Digitale Medien
    Room temperature growth of cubic boron nitride (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1552-1554 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Boron nitride thin films were deposited at room temperature with various ion energies by mass selected ion beam deposition on cubic boron nitride (c-BN) previously nucleated on Si (100) substrates at a higher temperature. Selective area diffraction, electron energy loss, and infrared spectroscopy results reveal continued growth of the cubic phase. The reported temperature threshold of about 150 °C for c-BN film formation is therefore unmistakably related to the initial nucleation of c-BN, whereas the growth of c-BN appears to be temperature independent. The latter is in accordance with predictions of the cylindrical thermal spike growth model recently proposed by our group. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123613
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