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  • 1
    Digitale Medien
    Digitale Medien
    Epitaxial growth of Gd silicides prepared by channeled ion implantation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3103-3107 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A continuous buried GdSi1.7 layer is formed by channelled implantation of 90 keV Gd ions into Si(111). In the case of (001) oriented silicon substrates, the silicide film is formed on the silicon surface. Its worse crystalline quality is due to the epitaxy occurring relative to all four {111}Si planes resulting in a textured GdSi1.7 layer. Annealing at a temperature of ≥850 °C for 30 min results in the presence of only the orthorhombic GdSi2 phase on the silicon surface for both (111) and (001) silicon substrates. However, the precipitates embedded in the silicon substrate are still hexagonal GdSi1.7. The phase transformation temperature is higher for (111) than for (001) silicon. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.364344
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  • 2
    Digitale Medien
    Digitale Medien
    Ion beam syntheses and microstructure studies of a new FeSi2 phase (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3306-3309 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Iron-silicide has been formed by ion implantation of iron into silicon (111). In the as-implanted sample, a new type of orthorhombic FeSi2 phase was found. Although the lattice parameters of the new phase are the same as those of the known semiconductor β-FeSi2, its point group and space group were different and determined to be mmm and Pbca, respectively. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363240
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  • 3
    Digitale Medien
    Digitale Medien
    Defect-enhanced electron field emission from chemical vapor deposited diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2707-2711 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Diamond samples with varying defect densities have been synthesized by chemical vapor deposition, and their field emission characteristics have been investigated. Vacuum electron field emission measurements indicate that the threshold electric field required to generate sufficient emission current densities for flat panel display applications ((approximately-greater-than)10 mA/cm2) can be significantly reduced when the diamond is grown so as to contain a substantial number of structural defects. The defective diamond has a Raman spectrum with a broadened peak at 1332 cm−1 with a full width at half maximum (FWHM) of 7–11 cm−1. We establish a strong correlation between the field required for emission and the FWHM of the diamond peak. The threshold fields are typically less than 50 V/μm and can reach as low as 30 V/μm for diamond with a FWHM greater than 8.5 cm−1. It is believed that the defects create additional energy bands within the band gap of diamond and thus contribute electrons for emission at low electric fields. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360066
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  • 4
    Digitale Medien
    Digitale Medien
    Giant magnetoresistance in melt-spun Cu80Ni10Fe10 ribbons : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5599-5601 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Magnetoresistance (MR) behavior in melt-spun ribbons of a Cu80Ni10Fe10 alloy has been studied. The rapid solidified ribbon, when properly heat treated for phase decomposition, exhibits giant magnetoresistance behavior with the MR values of 8.5% at room temperature and 29% at 4.2 K. The observed magnetoresistance in the alloy is attributed to spin-dependent scattering at the two-phase interface and in the ferromagnetic phase. The substantial increase in MR, as the temperature decreases from room temperature to 4.2 K, is most likely caused by the reduction of spin-flip scattering of conducting electrons in the paramagnetic regions as a result of magnetic transformation. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362254
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  • 5
    Digitale Medien
    Digitale Medien
    Deep levels in nitrogen-implanted n-type GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4261-4263 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359889
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  • 6
    Digitale Medien
    Digitale Medien
    Local thermal conductivity in chemical-vapor-deposited diamond (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1552-1556 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The thermal conductivity has been measured in the temperature range 5–400 K for a series of chemical-vapor-deposited diamond samples differing only in thickness. By analyzing the conductance, a local conductivity is extracted as a function of height z above the substrate on which the samples were grown. An analysis of the temperature dependence of the conductivity at any given height yields the phonon scattering mechanisms as a function of z. Point defects and extended defects of approximately 1.5 nm diam appear to be the most important phonon scattering entities at room temperature, but their scattering strengths decrease with height above the substrate. At a height z≈300 μm, the material is sufficiently perfect that scattering from extended defects at room temperature is negligible and scattering from point defects is only slightly higher than that attributable to naturally occurring 13C. The observed anisotropy of the thermal conductivity is consistent with aggregation of point defects and extended defects at or near grain boundaries. The z dependence of the scattering from these defects suggests that the quality of the grain boundaries increases with z. For z(approximately-greater-than)300 μm, the conductivity is equal to that of single crystals of gem-quality type IIa diamond.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357733
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  • 7
    Digitale Medien
    Digitale Medien
    Giant magnetoresistance in spinodally decomposed Cu–Ni–Fe films : The 6th joint magnetism and magnetic materials (MMM)−intermag conferenc (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6814-6816 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the observation of the GMR effect in spinodally decomposed Cu–20Ni–20Fe thin films. A ΔR/R value as high as 6.5% was observed at room temperature. In contrast to the commonly observed temperature-dependent behavior of ΔR/R increasing at low temperature; thin film shows a decrease in ΔR/R at 4.2 K. The dependence of the GMR effect on various deposition parameters, such as substrate temperature has been studied. The observed giant magnetoresistance behavior in Cu–20Ni–20Fe films is most likely related to the field-induced decrease in electron scattering in a pseudosuperparamagnetic material, as well as the spin-dependent scattering at the two-phase interface and in the ferromagnetic phase.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358138
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  • 8
    Digitale Medien
    Digitale Medien
    Modulation-induced giant magnetoresistance in a spinodally decomposed Cu-Ni-Fe alloy : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6915-6917 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Giant magnetoresistance in a spinodally decomposed, bulk 60 Cu-20 Ni-20 Fe alloy is reported. An annealed, quenched, and heat-treated sample with a compositional modulation of (approximately-less-than)50 A(ring) size exhibits a ΔR/R value as high as 9% at 4.2 K. Optimization of the ferromagnetic phase particle geometry through a combination of spinodal decomposition and uniaxial deformation led to a locally multilayered, superlattice-like structure and a dramatic increase in room-temperature magnetoresistance from ∼0.6 to ∼5%. This improvement in magnetoresistance is accompanied by a decrease in coercivity from ∼620 Oe in the fully decomposed material to ∼45 Oe in the optimized structure. Interestingly, this structure no longer exhibits the commonly observed temperature-dependent behavior of ΔR/R increasing at low temperatures, but rather shows a decrease at 4.2 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356779
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  • 9
    Digitale Medien
    Digitale Medien
    Colossal magnetoresistance in La-Ca-Mn-O ferromagnetic thin films (invited) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6929-6933 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A colossal magnetoresistance effect with more than a thousandfold change in resistivity (ΔR/RH=127 000% at 77 K, H=6 T) has been obtained in epitaxially grown La-Ca-Mn-O thin films. The effect is negative and isotropic with respect to the field orientations. The magnetoresistance is strongly temperature dependent, and exhibits a sharp peak that can be shifted to near room temperature by adjusting processing parameters. Near-room-temperature ΔR/RH values of ∼1300% at 260 K and ∼400% at 280 K have been observed. The presence of grain boundaries appears to be detrimental to achieving very large magnetoresistance in the lanthanum manganite films. The orders of magnitude change in electrical resistivity could be useful for various magnetic and electric device applications.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358119
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  • 10
    Digitale Medien
    Digitale Medien
    Demetalation chemistry: control of vanadium on fluid cracking catalyst (1990)
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 29 (1990), S. 1183-1189 
    Details
    ISSN: 1520-5045
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ie00103a016
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