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  • 1
    Digitale Medien
    Digitale Medien
    Caste and age variations of the incidence of LDH variants in the Bengali Hindus (1972)
    Springer
    Human genetics 〈Berlin〉 14 (1972), S. 151-154 
    Details
    ISSN: 1432-1203
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Medizin
    Beschreibung / Inhaltsverzeichnis: Zusammenfassung In Fortsetzung unserer Untersuchungen über die Häufigkeit der genetisch determinierten Varianten der Lactat-Dehydrogenase (LDH) in der indischen Population wurde einiges Material gesammelt, das sich zur Untersuchung des Problems eignet, ob Häufigkeitsunterschiede nach Kasten und Alter für das Vorkommen der häufigen Variante LDH Cal-1 unter den Hindus in Bengalen bestehen. Es handelt sich um eine rasche Variante der A-Untereinheit.
    Notizen: Summary In continuing our studies on the incidence of the genetically determined variants of Lactate dehydrogenase (LDH) among the Indian populations, it has been possible to collect some suitable material presented here to examine the question of caste and age variations in the incidence rates of the commonly occurring variant, LDH Cal-1, among the Bengali Hindu. It is a “Faster A-subunit variant”.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00273300
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  • 2
    Digitale Medien
    Digitale Medien
    LDH variants in India (1970)
    Springer
    Human genetics 〈Berlin〉 9 (1970), S. 107-109 
    Details
    ISSN: 1432-1203
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Medizin
    Notizen: Summary 17 examples of genetically controlled variation of LDH have been encountered in a survey of 1331 Indian blood samples collected in Calcutta and Madras. 15 of the variants (10 in Calcutta and 5 in Madras) were identical and have been given the trivial name ‘Calcutta-1’. The other 2 examples were found in Madras and have been called ‘Madras-1’. ‘Calcutta-1’ is an A-subunit variant, whilst ‘Madras-1’ is a B-subunit variant. The overall frequency of LDH variants in India (1.28 per cent) is among the highest reported for any population in the world.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00696021
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  • 3
    Digitale Medien
    Digitale Medien
    Novel phototransformations of bridgehead-dimethyl-substituted dibenzobarrelene. Structure of the photoproducts (1991)
    s.l. : American Chemical Society
    The @journal of organic chemistry 56 (1991), S. 5890-5893 
    Details
    ISSN: 1520-6904
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/jo00020a034
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  • 4
    Digitale Medien
    Digitale Medien
    Raman Effect in Organic Compounds (1932)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 36 (1932), S. 586-594 
    Details
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/j150332a014
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  • 5
    Digitale Medien
    Digitale Medien
    Synthesis and antihypertensive activity of some imidazoindole derivatives (1976)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 19 (1976), S. 1352-1354 
    Details
    ISSN: 1520-4804
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/jm00233a022
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  • 6
    Digitale Medien
    Digitale Medien
    Preparation and properties of electrodeposited indium tin oxide/SnO2/CdTe and indium tin oxide/SnO2/CdS/CdTe solar cells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 782-786 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Cadmium telluride-based solar cells have been prepared as indium tin oxide (ITO)/SnO2/CdTe and indium tin oxide/SnO2/CdS/CdTe structures where CdS and CdTe were prepared by an electrodeposition technique. Both open circuit voltage and short circuit current of ITO/SnO2/CdTe cells were higher than that of ITO/SnO2/CdS/CdTe cells. The spectral response measurement showed that the current collection was higher in the ITO/SnO2/CdTe cell relative to the ITO/SnO2/CdS/CdTe cell. Current-voltage temperature measurements indicated that the junction transport could be controlled by recombination or thermally assisted tunneling in the ITO/SnO2/CdTe cell, whereas tunneling could be the dominant junction transport mechanism in the ITO/SnO2/CdS/CdTe cell. Activation energies of ITO/SnO2/CdTe and ITO/SnO2/CdS/CdTe cells were 0.60 and 0.76 eV, respectively. The values of the built-in potential, Vbi calculated from the measurement of open circuit voltage with temperature were 1.41 and 1.5 eV for ITO/SnO2/CdTe and ITO/SnO2/CdS/CdTe cells, respectively, whereas from Mott–Schottky plots they were 1.1 and 0.95 eV, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353338
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  • 7
    Digitale Medien
    Digitale Medien
    Influence of growth and microstructure of electrodeposited cadmium telluride films on the properties of n-CdS/p-CdTe thin-film solar cells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4940-4945 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin-film n-CdS/p-CdTe solar cells have been fabricated from electrodeposited CdS and CdTe layers. Cells made with crystalline CdTe films were 9.0%–11.5% efficiencies whereas those with CdTe of structural imperfection gave up to 6.8% efficiency. Cell efficiencies varied with growth conditions of CdTe depositions. Scanning electron micrographs and x-ray diffraction patterns showed that the CdTe deposits of relatively good cells had less grain boundaries and better crystallinity than less efficient cells. Capacitance measurements showed that the cells made with CdTe of structural imperfection had large number of interface states relative to those with crystalline CdTe films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352062
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  • 8
    Digitale Medien
    Digitale Medien
    Tangentially phase matched second-harmonic generation in various crystals (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3620-3622 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Tangential phase matching is studied for second-harmonic generation. It occurs at any wavelength for certain values of noncollinearity in phase matching when it provides an increase in angular tolerance between the interacting beams. It is verified experimentally for barium borate and deuterated potassium dihydrogen phosphate crystals.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350920
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  • 9
    Digitale Medien
    Digitale Medien
    Temperature and illumination intensity dependence of photoconductivity in sputter-deposited heteroepitaxial (100)CdTe layers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8210-8216 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Sputter-deposited, heteroepitaxial (100)CdTe layers prepared at growth temperatures of 300–325 °C are found to be p-type with high dark resistivities on the order of 2×105 Ω cm. The epilayers are highly photoconducting and exhibit photoconductivity to dark conductivity ratios as high as 1×106 at around 200 K. The photoconductivity is observed to exhibit a sublinear dependence on illumination intensity and a thermally activated behavior. The model developed by Simmons and Taylor [J. G. Simmons and G. W. Taylor, J. Phys. C: Solid State Phys. 7, 3051 (1974); G. W. Taylor and J. G. Simmons, J. Phys. C: Solid State Phys. 7, 3067 (1974)] to explain photoconductivity in amorphous semiconductors is shown to be applicable to these epitaxial layers. Hole traps at 0.40 and 0.23 eV above the valence band have been determined from the temperature dependence of the photoconductivity. Acceptor levels at 0.62 and 0.07 eV above the valence band, determined from the temperature dependence of the dark conductivity, are discussed in relation with photoluminescence bands at 0.81 and 1.00 eV reported earlier [S. R. Das, J. G. Cook, N. L. Rowell, and M. S. Aouadi, J. Appl. Phys. 68, 5796 (1990)] in these epilayers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347424
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  • 10
    Digitale Medien
    Digitale Medien
    Langmuir diagnostics of an rf-magnetron discharge used for ion-assisted growth of PbTe epilayers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1635-1640 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The plasma potential and the electron density and electron temperature of an rf magnetron discharge used for the ion-assisted growth of PbTe epilayers on BaF2 are measured using Langmuir probe diagnostics. The effect of rf potentials at the probe on the measured plasma parameters is reduced by driving the probe to follow the plasma potential. The discharge parameters are determined as a function of substrate bias voltage and substrate rf power. The ion energy and flux necessary for the epitaxial growth of (111) PbTe on (111) BaF2 are determined.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346644
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