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Initial reactions in Ti–Si bilayers: New indications from in situ measurements (2001)

Cocchi, R. ; Giubertoni, D. ; Ottaviani, G.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 6079-6084

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The interactions occurring in a Ti–Si bilayer have been investigated by in situ resistance measurements and the reaction products have been analyzed by complementary techniques, such as x-ray diffraction, Auger electron spectroscopy, and MeV 4He+ Rutherford backscattering. The measurements were performed by heating the samples at a constant rate in the 5–425 °C/min range. The samples are 60 nm of titanium sputter deposited on 250 nm of a silicon film deposited by chemical vapor technique; the bilayers were placed on 650 nm of SiO2, thermally grown on p-type 〈100〉 silicon wafers. Samples were also prepared by reactively depositing 25 nm of TiN on the Ti film. The TiN cap, deposited without breaking the vacuum, protects the metal films from contaminants, namely oxygen, during handling and heat treatments. It has been shown that, at temperatures around 400 °C and before any massive Ti–Si interaction, the resistance increases. This effect, attributed in the literature to the silicon diffusion in the metal film, is due to oxygen, generally contained in the annealing ambient, which diffuses in the Ti film. The Ti–Si reaction produces a decrease in the value of resistance; the first decrease, generally attributed to the formation of a C49–TiSi2 phase, is due to the growth of an amorphous compound having a graded in-depth composition between Ti5Si3 and TiSi. The activation energy for such formation is 2.8±0.1 eV. At higher temperatures C49–TiSi2 starts to form, more likely between the silicon and the amorphous layer. The formation of silicide induces a segregation of oxygen in the unreacted Ti film, thus slowing down the growth of silicide. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1352556

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Helium/deuterium coimplanted silicon: A thermal desorption spectrometry investigation (2001)

Corni, F. ; Nobili, C. ; Tonini, R. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 2870-2872

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Thermal desorption spectrometry has been applied to investigate the blistering and exfoliation phenomena which occur at the surface of a p-type (100) silicon wafer coimplanted with helium and deuterium. During the heat treatments in linear temperature ramp, an explosive emission of both gases occurs. The phenomenon is kinetically controlled with an effective activation energy of 1.3±0.2 eV. In addition, the desorption spectra present a second contribution, attributed to deuterium emission from buried cavities. Also in this case, the process is kinetically controlled with an effective activation energy of 1.9±0.3 eV. Thermal desorption spectrometry is a suitable technique to have information about various phenomena which occur during blistering and exfoliation. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1344568

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Damage Evolution in Helium-Hydrogen Co-Implanted (100) Silicon (2001)

Tonini, R. ; Corni, F. ; Nobili, C. ; [weitere]

s.l. ; Stafa-Zurich, Switzerland

Solid state phenomena Vol. 82-84 (Nov. 2001), p. 291-296

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ISSN: 1662-9779

Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Thema: Physik

Materialart: Digitale Medien

URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.82-84.291.pdf

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