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Digitale Medien

Production and stability of silicon-doped heterofullerenes (1999)

Blase, X. ; Broyer, M. ; Kéghélian, P. ; [weitere]

Springer

The European physical journal 9 (1999), S. 49-54

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Details

ISSN: 1434-6079

Schlagwort(e): PACS: 36.40.-Qv Stability and fragmentation of clusters

Quelle: Springer Online Journal Archives 1860-2000

Thema: Physik

Notizen: Abstract. Silicon–carbon binary clusters with various mean compositions are generated in a laser vaporization source from targets processed as mixtures of graphite and silicon powders. Their size distribution is first analyzed by time-of-flight mass spectroscopy, which shows the stability of carbon fullerenes doped with silicon atoms in substitutional sites. Further investigations on the level of silicon doping are carried out by means of the laser-induced fragmentation of selected sizes. The photoproduct size distributions give evidence for at least nine silicon atoms substituted into still stable fullerene networks. The synthesis of heterofullerenes is mainly assisted by the nucleation mechanisms from Si-C mixed atomic vapors. Just as in the case of externally doped fullerene precursors, the laser-induced annealing of stoichiometric silicon-carbide clusters appears as an alternative route to produce heterofullerenes in the gas phase.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/s100530050398

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