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Lifetime spectra of positrons in deformed Ge (1974)

Kuramoto, E. ; Takeuchi, S. ; Noguchi, M. ; [et al.]

Springer

Applied physics 4 (1974), S. 41-45

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ISSN: 1432-0630

Keywords: Positron lifetime ; Semiconductor dislocation

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Positron lifetime measurements have been performed inn-type andp-type germanium single crystals deformed by compression. The results are compared with those of deformed GaAs single crystals obtained by the authors previously. In bothn andp-type germanium the lifetime τ1 and its intensityI 1 decreased with deformation. Using the trapping model, the trapping rates of positrons by dislocations are obtained, which in turn gave the cross width of the dislocation as 20.0 Å and 8.2 Å forn-type andp-type germanium, respectively. In terms of Read's model the fraction of the dangling bonds occupied by electrons is obtained to 0.26 in then-type germanium. This value was smaller than those obtained forn-type GaAs, i.e., 0.46 and 0.50 for Ga- and As-dislocation, respectively. It is found that doping causes the trapping of positrons. Inp-type germanium the fractionf was determined to 0.25 in terms of Schröter and Labusch's model.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00884151

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