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  • 1
    Electronic Resource
    Electronic Resource
    Positron studies of metal-oxide-semiconductor structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2972-2976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353029
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  • 2
    Electronic Resource
    Electronic Resource
    Positron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5606-5609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350540
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  • 3
    Electronic Resource
    Electronic Resource
    Positron annihilation at the Si/SiO2 interface (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 530-532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that Sint depends directly on holes at interface states or traps at the Si/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350694
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  • 4
    Electronic Resource
    Electronic Resource
    Study of SiO2-Si and metal-oxide-semiconductor structures using positrons (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 168-184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of SiO2-Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape S data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO2-Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of γ-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353879
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  • 5
    Electronic Resource
    Electronic Resource
    Chemical interactions at a Ti/Bi2Sr2CaCu2O8 interface (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2783-2788 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray and ultraviolet photoelectron spectroscopies were used to investigate the microscopic changes at the Ti/Bi2Sr2CaCu2O8 interface. Ti extracts oxygen out of the superconductor by disrupting vital bonds such as Cu—O and Bi—O. The adatom-induced oxygen withdrawal is explained on the basis of cationic bond lengths in the superconductor and standard bond strengths. The changes associated with Cu 2p spectra are attributed to an increase in covalency of Cu—O bonds, which is the consequence of a rearrangement of oxygen anions around Cu+2 ions. In the early stages of the interface formation, bismuth and titanium are in a complex bonding configuration, which is evident from their binding energies. The line shape analysis of Ti 2p spectra reveals that Ti is in multiple oxidation states at different stages of the evolving interface. This shows that the mobility of oxygen is an important factor which controls the overlayer growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351055
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  • 6
    Electronic Resource
    Electronic Resource
    Positron mobility in thermally grown SiO2 measured by Doppler broadening technique (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2874-2876 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The positron mobility in thermally grown SiO2 is deduced from Doppler broadening lineshape data on a metal-oxide-semiconductor sample for positrons implanted into the oxide layer. The fitted mobility is ∼13(10)×10−3 cm2/s V. This value is between that of the electron and hole mobilities in the same system and is two orders of magnitude smaller than the previous estimate from positron measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349353
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  • 7
    Electronic Resource
    Electronic Resource
    Study of hydrogen interaction with SiO2/Si(100) system using positrons (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6603-6606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe positron annihilation studies of SiO2/Si(100) structures having 100-nm-thick oxide grown by plasma enhanced chemical vapor deposition. A normalized shape parameter is used to characterize the positron annihilation spectra. Activation and passivation of interface states by atomic hydrogen are demonstrated by repeated vacuum anneal and atomic hydrogen exposure. Hydrogen activation energy is derived for one of the samples as (large-closed-square)=2.02±0.07 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348872
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of different preparation conditions on light emission from silicon implanted SiO2 layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8660-8663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible light emission from Si+ implanted SiO2 layers as a function of different annealing conditions (temperature, time and ambient) is studied. It is shown that a 560 nm band, present in as implanted samples, increases its intensity for increasing annealing temperatures and is still observed after annealing at 1000 °C. The emission time is fast (0.5–2 ns). A second band centered at 780 nm is detected after annealing at 1000 °C. The intensity of the 780 nm band further increases when hydrogen annealing was performed. The emission time is long (1μs–0.3 ms). Based on the annealing behavior and on the emission times, the origin of the two bands is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362490
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  • 9
    Electronic Resource
    Electronic Resource
    Comparison of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 269-272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS) have been used to characterize the surface versus bulk composition, electronic, and physical structure of polycrystalline Cu(In,Ga)Se2 thin-film interfaces. Angle-resolved high-resolution photoemission measurements on the valence-band electronic structure and Cu 2p, In 3d, Ga 2p, and Se 3d core lines were used to evaluate the surface and near surface chemistry of CuInSe2 and Cu(In,Ga)Se2 device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Results of these measurements are related to device efficiencies to show the effects of compositional variations and defect concentrations in the near surface region on device performance. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360669
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  • 10
    Electronic Resource
    Electronic Resource
    Role of implantation-induced defects in surface-oriented diffusion of fluorine in silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3403-3409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Open-volume defects introduced in Si(100) crystals during fluorine implantation were investigated by variable-energy positron beam depth profiling. The behavior of the implantation-induced lattice defects upon high temperature annealing and their role in the surface-oriented diffusion of F impurities were examined. The defects become mobile and undergo recovery at temperatures below 550 °C, i.e., well before the onset of fluorine diffusion as seen by secondary ion mass spectroscopy (SIMS) profiling. This behavior suggests that after irradiation and annealing the fluorine occupies substitutional sites to which positrons are insensitive. The anomalous F diffusion seen in SIMS has been explained through a two-step diffusion mechanism, in which the diffusion kinetics is determined by dissociation of the substitutional F into an interstitial F and a vacancy, followed by a rapid diffusion of the interstitial F and the vacancy through the crystal to the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357470
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