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  • 1
    Digitale Medien
    Digitale Medien
    Paramagnetic defects in neutron-irradiated GaP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4615-4617 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Aiming at a better understanding of intrinsic defects in III-V compounds, we reinvestigate fast-neutron-irradiated GaP. The surprising result is the observation of a similar spectrum, formerly ascribed to Asi-related defects in GaAs. Annealing experiments suggest this spectrum involves an impurity, probably boron.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350762
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  • 2
    Digitale Medien
    Digitale Medien
    Temperature behavior of multiple tunnel junction devices based on disordered dot arrays (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 345-352 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nanometer-sized multijunction arrays are expected to exhibit a large Coulomb blockade effect. However, up to now, only highly disordered arrays can be fabricated. In this article, we evaluate the consequences of disorder on the dispersion of the device characteristics. We show that, as observed for regular arrays, the threshold voltage Vth increases with the length of the multijunction array. At very low temperature, the Vth dispersion is small. Conversely, at higher temperature, a large dispersion in Vth is observed. We evidence the importance of the different array parameters with respect to the device characteristics. We show that the crucial parameters are the tunnel resistances and, therefore, for a two-dimensional array, the total resistance of the minimal resistance path is the most relevant parameter. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371867
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  • 3
    Digitale Medien
    Digitale Medien
    Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5196-5198 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A comparison of the electron paramagnetic resonance spectra obtained in fast neutron- and electron-irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As4+Ga and V2−Ga centers. Only in electron-irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As4+Ga-V2−Ga associated complexes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.335256
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  • 4
    Digitale Medien
    Digitale Medien
    Persistent photoquenching and anion antisite defects in neutron-irradiated GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 907-909 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A potential origin for the reported discrepancies on the low-temperature photosensitivity of particle-induced anion antisites in GaAs is revealed by a systematic study of the relative fraction of photoquenchable paramagnetic As4+Ga centers as a function of neutron fluence and annealing temperature. The electron paramagnetic resonance data show that the As4+Ga centers can be split into two subsets.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100804
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  • 5
    Digitale Medien
    Digitale Medien
    Variance analysis of the Coulomb blockade parameters in nanometer-size disordered arrays (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 953-957 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Recently, Coulomb blockade could be observed up to room temperature on devices with arrays. As they are highly disordered, an important dispersion of the electrical characteristics is expected. We calculate the dispersion of the Coulomb blockade threshold voltage Vth, for disordered arrays. At very low temperature, Vth increases with the array size, as well for one-dimensional (1D) as for two-dimensional (2D) arrays, and the relative dispersion remains smaller than 10%. Such a promising behavior does not hold at higher temperatures. On one hand, a larger gain in Vth with the array size is only obtained on 1D arrays. On the other one, the dispersion rapidly becomes catastrophic for both 1D and 2D cases. We propose a way to reduce it to a range of 10%–15%, almost compatible with very large scale integration applications. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1381555
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  • 6
    Digitale Medien
    Digitale Medien
    Fast neutron-induced defects in undoped and iron-doped indium phosphide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4406-4412 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Undoped and iron-doped InP samples have been investigated by conventional electron paramagnetic resonance measurements before and after fast neutron irradiations. Besides the expected anion antisite PIn defect, they reveal the presence of a broad spectrum that could be ascribed to an anion vacancy Vp on the basis of detailed linewidth and g-shift scalings of the resonance parameters of already identified intrinsic defects in GaP and InP. The irradiated InP:Fe sample shows both the nearest and next-nearest FeIn-Ini pairs.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339077
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  • 7
    Digitale Medien
    Digitale Medien
    Identification of paramagnetic AsGa and optical EL2 centers in semi-insulating gallium arsenide (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2595-2602 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: After a brief recall of our main results obtained during a recent theoretical cluster calculation on anion antisite-related defects in GaAs, we discuss the consequences of their resonance parameters. Experimentally, we perform a detailed analysis of the electron paramagnetic resonance data in plastically deformed undoped and Cr-doped semi-insulating materials in conjunction with simultaneous EL2° optical absorption measurements. Combining theoretical calculations and experimental results, we are able to identify the "As+Ga'' spectrum as a superposition of spectra ascribed to the isolated As+Ga and to its binary and ternary vacancy complexes, whereas the ternary complex AsGaVGaVAs only is believed to be the probable configuration for EL2.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341133
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  • 8
    Digitale Medien
    Digitale Medien
    Photoexcitation effects in semi-insulating GaAs as revealed by electron paramagnetic resonance (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2812-2816 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A set of semi-insulating bulk GaAs samples of various specifications and origins has been studied under illumination conditions proper to reveal quenchable paramagnetic signals behaving like the metastable electrical defect EL2. Whereas In-alloyed crystals are almost free of any defect, all other materials display photosensitive signals which are either a quenchable quadruplet constrainable to the As4+Ga configuration or two enhanceable singlets not yet fully identified; the preferred occurrence of either type of spectrum is seemingly linked to the growth method.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336962
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  • 9
    Digitale Medien
    Digitale Medien
    Charge transfer between paramagnetic photoquenchable anion antisites and electron-induced acceptors in GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5648-5651 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The variation of As+Ga content during illumination in weakly electron-irradiated semi-insulating GaAs is analyzed in terms of the pertinent parameters of the midgap donor EL2, leading to a determination of the total content of photoquenchable anion antisites independent of initial paramagnetic fraction. The associated photocarrier release is used for modeling the corresponding variation of the concentration of neutralized ST1 acceptors in a scheme involving one donor and two competing acceptor levels.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343679
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  • 10
    Digitale Medien
    Digitale Medien
    Electron paramagnetic resonance monitoring of recovery of fast neutron irradiated GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1332-1335 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron paramagnetic resonance spectra of fast neutron irradiated semi-insulating GaAs, recorded at 9 GHz and 4.2 K, have been studied as a function of isochronal thermal anneals. Their decomposition into quadruplet and singlet allows one to determine the main annealing temperatures of the corresponding defects, previously identified as As4+Ga and V2−Ga, which occur respectively at 400 and 600 °C. Comparison with the behavior of implantation damage shows that electrical activation of Be+ implants is correlated with the annealing of the main defects on the cation sublattice. Finally, the linewidth variation of the quadruplet during its decay indicates a concomitant change of the local environment of the As4+Ga center.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.334535
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