Library

X
Your search history is empty.
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Vacancy-type defects in Si+ -implanted GaAs and its effects on electrical activation by rapid thermal annealing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6153-6158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth distributions of vacancy-type defects in Si+ -implanted and thermally activated GaAs were studied by a slow positron beam technique and were compared with the results observed with a transmission electron microscope. In as-implanted GaAs, the concentration of vacancy-type defects decreased monotonically with increasing depth below the surface and the generation of point defects was demonstrated by the lattice image of transmission electron microscopy. The vacancy concentration is not dependent upon activation conditions; however, the electrical activation coefficiency obtained from Hall measurements is enhanced with increasing activation annealing time. This indicates that the electrical activation of Si+ -implanted GaAs is proceeding by the exchange of interstitial Si with substitutional Ga rather than the recombination of interstitial Si into Ga-related vacancies. The maximum number of extrinsic-type stacking faults was observed at 70–80 nm below the surface after the activation annealing, which is compared with that of vacancy-type defects, at 25–35 nm, obtained by the slow positron beam technique. This discrepancy in both of the damage distributions could originate in different types of defects existing along the depth below the surface, which was discussed with the high-energy recoil theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345177
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6026-6031 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth distributions of oxygen-related defects in separation-by-implanted oxygen wafers were determined from measurements of Doppler broadening spectra of the annihilation radiation. Vacany–oxygen complexes were introduced by implanting 180-keV oxygen at (2–6)×1017 cm−2 into Si substrates. Their sizes decreased below the subsurface region (〈100 nm) because an agglomeration of vacancy-type defects was suppressed by the interaction between vacancies and oxygen atoms. As the dosage was increased, in the region near the projected range of oxygen, atomic rearrangement of vacancy-type defects occurred, and this rearrangement is considered to introduce SiOx (x〈2) that is stable at high annealing temperatures. Oxygen-related defects were presented in the superficial Si layer even after annealing at 1350 °C. The concentration of such defects was low when the substrate was implanted with a dose of 4×1017 cm−2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415064
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Oxygen-related defects in O+-implanted 6H–SiC studied by a monoenergetic positron beam (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5392-5398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vacancy-type defects and their annealing properties for O+- or N2+-implanted 6H–SiC were studied using a monoenergetic positron beam. For ion-implanted specimens with a dose of 1×1013 cm2, the mean size of open volume of defects was estimated to be close to the size of divacancies. Annealing processes of the damage were identified to be agglomerations of vacancy-type defects due to migrations of carbon vacancies (100–400 °C), silicon vacancies (400–800 °C), and vacancy complexes such as divacancies (800–1000 °C), and the annealing out of the open spaces adjacent to extended defects (1000–1400 °C). From a comparison between the annealing behaviors of defects for the O+-and the N2+-implanted specimens, the migration and the agglomeration of vacancy-type defects were found to be suppressed in the O+-implanted specimen. This fact was attributed to the formation of complexes between vacancy-type defects and oxygen. For ion-implanted specimens with a dose of 1×1015 cm2, annealing behaviors of amorphous regions were also studied. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371536
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2498-2503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size and depth distributions of pores in silica-based intermetal-dielectric materials were studied using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons were measured for methyl-silsesquioxane (MSSQ) spin-on-glass films. The size distribution of pores in the MSSQ films fabricated with 8% porogen load was found to be bimodal, with the major peaks located at 3 and 8 nm3. Increasing the porogen load from 8% to 40% caused the smaller pores (3 nm3) to disappear and 30-nm3 ones to appear; these pores were considered to be interconnected, and this structure makes it possible for positronium (Ps) atoms to find paths towards the surface and to escape into vacuum. The 8%-porogen MSSQ films had low porosity near the Si substrate. From measurements of the temperature dependence of the self-annihilation rate of ortho-Ps, we discuss the relationship between o-Ps emission into vacuum and the pore structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388858
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1659-1665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth distributions and species of defects in Si on insulator (SOI) fabricated by low-dose oxygen implantation were determined from measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons. The temperature range for the annealing of the defects in the subsurface region (〈100 nm) was divided into three stages. Annealing behaviors of the defects in stages I (600–800 °C) and II (800–1100 °C) were identified as the introduction of vacancy clusters and their recovery process, respectively. The major species of the defects in stage III (1100–1300 °C) was identified as oxygen-related defects, and the mean size of the open volume of such defects was close to that of a hexavacancy. The oxygen-related defects in the SOI layer were found to be present even after annealing at 1350 °C. The effect of the presence of vacancy-type defects on the depth distribution of oxygen atoms is also discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372074
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Vacancy-type defects in BaTiO3/SrTiO3 structures probed by monoenergetic positron beams (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5307-5312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin BaTiO3 films grown on SrTiO3 substrates were characterized by means of positron annihilation. The films were deposited by molecular-beam epitaxy without using oxygen source. We measured the Doppler broadening spectra of annihilation radiation and x-ray diffraction of the films and found that vacancy-type defects such as oxygen vacancies and other related defects caused lattice relaxation in the films. These defects disappeared after the films were annealed at 600 °C in an O2 atmosphere. Lattice relaxation in the films was also observed when the films were annealed at 1050 °C, but there was no direct relationship between the lattice relaxation that occurred at this temperature and vacancy-type defects. Vacancy-type defects were introduced into the SrTiO3 substrates by the growth of the BaTiO3 films. The species of these defects were identified as oxygen vacancies or defects related to oxygen vacancies, and they appeared as a result of diffusion of oxygen toward the BaTiO3 films. Almost all oxygen vacancies in the SrTiO3 substrates were annealed out at 500 °C. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462852
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3606-3610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vacancy-type defects introduced by the carburization of Si were studied by means of monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation were measured for Si substrates with carbon films at temperatures between 298 and 1473 K. The line-shape parameter S, which corresponds to the annihilation of positrons near the interface between the carbon film and the Si substrate, started to increase above 1173 K. This was attributed to the trapping of positrons by vacancy-type defects introduced by carburization. The major species of the defects detected by positron annihilation was identified to be vacancy clusters in the Si substrate. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352561
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4119-4125 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth distributions and species of defects were determined from measurements of Doppler broadening spectra of annihilation radiation and lifetime spectra of positrons for 6H-SiC implanted with 200 keV P+ at a dose of 1×1015 cm−2. The annealing behavior of an amorphous layer was divided into four stages. Stages I (100–500 °C) and II (500–1100 °C) were identified as the relaxation of amorphous networks and the agglomeration of open spaces owing to rearrangements of atoms, respectively. In states III (1100–1500 °C) and IV (1500–1700 °C), corresponding to the recrystallization of the amorphous layer, the mean size of the open volume of defects decreased with increasing annealing temperature; these defects were identified as open spaces adjacent to extended defects. Vacancy-type defects were found in the subsurface region (〈100 nm) at high concentration even subsequent to an annealing at 1700 °C. The annealing behavior of defects in the specimens irradiated at elevated temperatures is also discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373039
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Defects in p+-gate metal–oxide–semiconductor structures probed by monoenergetic positron beams (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5385-5391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects in p+-gate metal–oxide–semiconductor structures were probed using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for BF2+- or B+-implanted polycrystalline-Si(300 nm)/SiO2(4 nm)/Si specimens. The line-shape parameter, S, corresponding to the annihilation of positrons near SiO2 films was decreased by annealing treatments performed after ion implantation. This fact was attributed to the trapping of positrons by vacancy-oxygen complexes introduced by the boron diffusion in the SiO2 film. The introduction of such complexes was enhanced by incorporation of fluorine, but suppressed by doping of phosphorus into polycrystalline films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371535
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 117-118 (Jan. 1993), p. 225-230 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/59/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.117-118.225.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...