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  • 1
    Electronic Resource
    Electronic Resource
    Interdiffusion of GaAs/Ga1−xInxAs quantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8653-8655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of an investigation of interdiffusion in GaAs/Ga0.82In0.18As strained single quantum wells. Wells of width 12–100 A(ring), grown by organometallic vapor phase epitaxy, were subjected to 10 s rapid thermal anneals of 830–950 °C, and shifts in the electron-to-heavy-hole transition energies were detected by 4 K photoluminescence. We employed a powerful computer model to relate postdiffusion well shape to changes in photoluminescence energies, enabling estimation of diffusivity. Interdiffusion rates of 1×10−16–2×10−14 cm2/s and activation energies of 3.1–3.8 eV were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353376
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  • 2
    Electronic Resource
    Electronic Resource
    Interaction of the residual hydrogen gas with the growth of Y1Ba2Cu3O7−x films under high vacuum (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5703-5705 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y1Ba2Cu3O7−x films were fabricated by a reactive evaporation method using 10-mol-% O3 gas as an oxygen source. Mass spectroscopy measurement revealed that hydrogen gas was ejected from Y metal and Ba metal sources during evaporation. Y1Ba2Cu3O7−x film growth was adversely affected by the existence of this hydrogen gas, confirmed by in situ reflection high-energy electron diffraction (RHEED) observation. A streak RHEED pattern was maintained throughout evaporation only when the hydrogen partial pressure was smaller than 1×10−6 Torr. Only films grown under this condition showed superconducting behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350191
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  • 3
    Electronic Resource
    Electronic Resource
    Sequential deposition growth of Bi-Sr-Ca-Cu-O systems observed using in situ reflection high-energy electron diffraction (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 654-655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal growth mechanism in Bi-Sr-Ca-Cu-O thin films has been revealed by sequential deposition with an electron cyclotron resonance (ECR) oxygen plasma using in situ reflection high-energy electron diffraction (RHEED) observation. A series of RHEED patterns presents clear evidence that the unit cell of the Bi-Sr-Ca-Cu-O structure is completed as the Bi layers have sandwiched Sr, Ca, and Cu layers. This crystalline process is not an atomic layer by atomic layer growth but a "unit cell by unit cell'' growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104559
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature (250 °C) selective epitaxy of GaAs films and p-n junction by laser-assisted metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 767-769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature selective epitaxial growth of device quality GaAs has been achieved by laser-assisted chemical vapor deposition (LCVD). GaAs substrates thermally biased to temperatures in the range 250–500 °C were irradiated by an Ar ion laser to induce localized deposition of GaAs. Carefully selected growth conditions resulted in growth rates as low as a monolayer per second at 250 °C. This is the lowest substrate temperature for epitaxial GaAs with optical and structural quality comparable to those achieved in conventionally metalorganic chemical vapor deposition grown GaAs. Also reported is the first p-n junction by LCVD technique using zinc as the p-type dopant. This new low-temperature selective deposition process can lead to maskless fabrication of multicomponent devices on the same wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99827
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  • 5
    Electronic Resource
    Electronic Resource
    AlGaAs graded index lens for integrated optics (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2208-2210 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a new approach for two-dimensional graded index lenses, based on the one-dimensional compositional grading in III-V compounds ternary alloys. Compositional grading is achieved by the direct writing of these alloys, using the laser-assisted chemical vapor deposition technique. The desired compositional grading and the corresponding variations in the refractive index are achieved by changing the mole fraction of the reactants in the gas phase while scanning the laser beam. An AlGaAs graded index lens structure has been demonstrated for the first time. This III-V compound graded index lens can have potential applications in the field of integrated optics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99534
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  • 6
    Electronic Resource
    Electronic Resource
    Direct writing of GaAs monolayers by laser-assisted atomic layer epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1144-1146 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct writing of GaAs epitaxial monolayers has been achieved by laser-assisted atomic layer epitaxy (LALE) technique on GaAs substrates. Sequential exposures of the substrate to trimethylgallium (TMG) and arsine (AsH3) were separated by periods of hydrogen purging to prevent mixing. Laser beam scanning of the samples took place either during the flow of TMG or AsH3. The selectively grown films at the one monolayer per cycle condition have a mirrorlike surface and a flat top thickness profile. LALE has been realized at temperatures as low as 300 °C and over a wide range of TMG flux and laser power densities. Photoluminescence results of the deposited films show that their quality are comparable to those achieved by conventional ALE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99186
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  • 7
    Electronic Resource
    Electronic Resource
    Crystallinity of a-axis oriented YBa2Cu3O7−δ thin film epitaxially grown on NdGaO3 (110) by 95 MHz magnetron sputtering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1383-1385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An a-axis oriented 400 A(ring) YBa2Cu3O7−δ film has been epitaxially deposited on a NdGaO3 (110) substrate by rf magnetron sputtering using a single YBa2Cu5Ox target. An excitation frequency of 94.92 MHz, seven times as high as the conventionally used 13.56 MHz, results in a lower self-bias voltage which reduces degradation of films caused by resputtering due to negatively charged oxygen. Sharp streaks corresponding to the c-axis lattice parameter of YBa2Cu3O7−δ have been observed by reflection high-energy electron diffraction, showing that the c-axis is parallel to the surface of the NdGaO3 substrate and the film surface is smooth on an atomic scale. The crystallinity has been characterized by Rutherford backscattering channeling analysis. A minimum yield, χmin of 3.2%, has confirmed excellent crystallinity of the a-axis oriented film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105316
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  • 8
    Electronic Resource
    Electronic Resource
    High temperature ((approximately-greater-than)150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3351-3353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High temperature and very low threshold current operation of a separate confinement heterostructure (SCH) AlGaInP/GaxIn1−xP (x=0.43) strained multiple quantum well (SMQW) lasers has been achieved. Continuous wave (cw) operation was observed up to at least 150 °C with an output power of more than 7 mW, which is the highest cw operating temperature ever reported for devices operating in the visible wavelength region. The characteristic temperature between 20 and 80 °C was 130 K. The threshold current and threshold current density at 25 °C were 13.9 mA for a 5×160 μm device and 430 A/cm2 for a 80×770 μm device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105723
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal and Photochemical Conversion of Poly(methylsilane) to Poly(carbosilane) (1995)
    s.l. : American Chemical Society
    Macromolecules 28 (1995), S. 7235-7240 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00125a028
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  • 10
    Electronic Resource
    Electronic Resource
    In vitro expansion of human basophils by interleukin-3 from granulocyte colony-stimulating factor-mobilized peripheral blood stem cells (2003)
    Oxford, UK : Blackwell Science Ltd
    Clinical & experimental allergy 33 (2003), S. 0 
    Details
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background A number of studies support the belief that human basophils play an important role in allergic inflammation. The exact mechanism of basophil activation at the site of allergic inflammation, however, has not been well understood, mainly due to their low number in blood and difficulty in obtaining a sufficient number of highly purified basophils for investigation.Objective The purpose of this study is to expand human basophils in vitro with high yield and purity by culturing peripheral blood stem cells (PBSCs).Methods We collected PBSC-rich mononuclear cells containing CD34+ cells (0.15–4.9%) by leukapheresis from patients with malignant lymphoma and lung cancer during haematopoietic recovery after chemotherapy plus granulocyte colony-stimulating factor-induced mobilization. PBSC-rich mononuclear cells were cultured in the presence of IL-3.Results When PBSC-rich mononuclear cells containing more than 1% of CD34+ cells were cultured, 20.0–83.3% of the cells, mostly with a yield of 〉10%, were metachromatic cells after 3 weeks of culture. These cells resembled mature peripheral blood basophils morphologically when examined by light and electron microscopy. Flow cytometric analysis showed that they expressed both FcɛRI and FcγRII. FcɛRI cross-linking resulted in intracellular calcium mobilization, histamine release and synthesis of cysteinyl leukotrienes. The intracellular histamine content and the release of these chemical mediators triggered by anti-IgE antibodies were comparable to those of peripheral blood basophils.Conclusion These findings suggest that PBSC-derived basophils expanded in vitro are morphologically and functionally mature and will be a useful tool for the analysis of basophil functions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2222.2003.01791.x
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