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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 155-156 (May 1994), p. 59-70 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 176 (1993), S. 254-258 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters A 131 (1988), S. 69-72 
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 196 (1992), S. 95-97 
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6409-6415 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of C54 TiSi2 using Ti–Nb alloys deposited on polycrystalline Si substrates was studied by means of in situ x-ray diffraction and resistance measurements during temperature ramping. Alloys with Nb contents ranging from 0 to 13.6 at. % were used. The formation temperature of C54 TiSi2 was reduced in the presence of Nb. However, the addition of Nb in Ti did not cause fundamental changes in the evolution of resistance versus temperature. This latter observation suggests that the mechanism for the formation of C54 TiSi2 remained the same in spite of the enhancement effect. For alloys with up to 8 at. % of Nb, the C49 TiSi2 phase formed first, as with pure Ti. When annealing the alloy with 13.6 at. % Nb, neither C49 TiSi2 nor C54 were found in the usual temperature ranges, instead, C40 (Nb,Ti)Si2 was observed. This phase transformed to C54 (Nb,Ti)Si2 above 950 °C. The apparent activation energy associated with the formation of C54 TiSi2 was obtained by annealing the samples at four different ramp rates from 3 to 27 K/s; it decreased continuously from 3.8 to 2.5 eV with increasing Nb content from 0 to 8 at. %. The apparent activation energy for the formation of C40 (Nb,Ti)Si2 was found to be 2.6 eV. The possible physical meaning, or lack thereof, of the high activation energies derived from experimental measurements is extensively discussed. A qualitative model is proposed whereby nucleation would be rate controlling in pure TiSi2, and interface motion in samples with 8 at. % Nb. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3461-3463 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus doping of polycrystalline silicon by direct diffusion of PH3 at 685 and 785 °C followed by rapid thermal annealing (RTA) has been investigated. Unlike at 785 °C, the dopant profile is not uniform at 685 °C but becomes so after RTA at 1050 °C for 10 s, as revealed by secondary ion mass spectroscopy (SIMS). In the absence of any protection layer, RTA in N2 causes an out-diffusion of ∼50% of P from the sample diffused at 785 °C, although it activates ∼100% of the remaining P atoms as indicated by Hall and SIMS measurements. In contrast, RTA in O2 results in 95% activation of the incorporated P from the same sample, accompanying an oxidation of ∼7 nm polycrystalline Si. As regards the sample diffused at 685 °C, RTA in N2 does not cause any out-diffusion but activates less than 80% of the incorporated P atoms. This difference in behavior is attributed to the tendency to attain equilibrium concentrations of P in the crystallites and at the grain boundaries at the RTA temperature. The highest active P concentration achieved is 2.0×1020 cm−3 at 785 °C followed by RTA in O2 yielding a resistivity as low as 9×10−4 Ω cm. The simplicity of this relatively low temperature process is attractive for a single-wafer multisequence fabrication scheme.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 762-768 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of titanium during the formation of epitaxial CoSi2, grown from the reaction of Co(20 nm)/Ti(10 nm) bilayers with Si 〈100〉, has been investigated. Annealing of Co/Ti/Si structures, at temperatures between 850 and 1050 °C, is shown to be associated with the growth of an inhomogeneous CoSi2 layer having Ti-rich surface layer(s) on top. The formation of inhomogeneities in the CoSi2 layer is conclusively attributed to the presence of Ti-rich surface layer(s). It is shown that smooth and morphologically stable CoSi2 layers can be grown by removing these surface layers followed by a high-temperature treatment in nitrogen atmosphere. We propose that the underlying mechanism for the inhomogeneity formation within the CoSi2 layer is a nucleation-controlled process, induced by an anticipated reaction between the CoSi2 layer and Ti-rich phases near the surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7313-7322 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten (W) films are deposited from tungsten hexafluoride on sputter-deposited TiN adhesion layers in a cold-wall chemical vapor deposition reactor. The film resistivity of the W films is found to be thickness dependent. It decreases monotonically with increasing film thickness. Typical resistivity values of 40-nm-thick W films are about 19.3–23.4 μΩ cm, depending on the structure of the underlying TiN layer used. The resistivity of a 980-nm-thick W film is 9.8 μΩ cm. Oxygen and fluorine impurities, as well as structural difference in the W films are found to be the major causes for the resistivity variations. Lowering impurity level and/or increasing W crystallite size can decrease film resistivity. The stress of all the W films is found to be tensile, independent of the structure of the TiN layers. However, the absolute value of the stress is intimately associated with the structure of the TiN layers. The stress values can differ by a factor of more than 2 for the 40-nm-thick W films deposited on the different underlying TiN layers. The amplitude of stress also monotonically decreases with increasing film thickness. Consequently, the difference in stress induced by the difference in the underlying TiN layers gradually disappears as the film thickness increases. A strong correlation between the stress and the film texture is found. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 213-219 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten disilicide (WSi2) was formed by annealing tungsten films deposited by low-pressure chemical vapor deposition on 〈100〉-silicon substrates. The influence of oxygen on the silicidation rate was studied. Si wafers with different oxygen content in the form of Czochralski, float-zone, and epitaxial wafers were used. Oxygen was also ion implanted into either the silicon substrate or the as-deposited tungsten film. The Rutherford backscattering technique was used to follow the progress of the silicidation. The silicidation rate was found to be dependent on the oxygen content of the Si substrates. The rate was lowest for Czochralski substrates and highest for float-zone substrates. Secondary ion mass spectroscopy was used to study the oxygen and fluorine profiles in the films prior to and after silicidation. Growth of WSi2 was found to be retarded concurrently with a pile-up of fluorine at the tungsten side of the W/WSi2 interface and a gettering of oxygen from the annealing atmosphere at the interface. Growth of WSi2 was then transferred to the tungsten surface. Oxygen implantation into silicon and tungsten, respectively, reduced the rate of silicide formation. Oxygen implantation into tungsten altered the distribution of fluorine and suppressed WSi2 growth at the tungsten surface. The observations led to a conceptual model, which ascribes the retardation in the growth of the inner WSi2 to a"poisoning'' effect caused by the increase of oxygen and fluorine levels at the interface.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3795-3797 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyzed the Raman spectra and x-ray diffraction of two GaAs/Al0.3Ga0.7As superlattices grown by molecular-beam epitaxy on a 4 ° misoriented (001) GaAs substrate and an exactly (001)-oriented GaAs substrate respectively. From the frequency shifts of the longitudinal-optical- (LO) confined phonons in the Raman spectra and the variation in linewidths of both the LO-confined phonons and the satellite peaks in x-ray diffraction, we found that the 4 ° misorientation of the GaAs substrate from (001) toward [110] direction improves the interface quality of the superlattices.
    Type of Medium: Electronic Resource
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