ISSN:
0268-2605
Keywords:
single-source precursor
;
tetrakis(diethylamido)chromium
;
pyrolysis mechanism
;
MOCVD
;
low-temperature deposition
;
chromium carbonitride thin films
;
hard metallurgical coatings
;
Chemistry
;
Industrial Chemistry and Chemical Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
Notes:
Amorphous chromium carbonitride coatings with a low nitrogen content (3-8 at%) were deposited by low-pressure MOCVD in the temperature range 573-793 K using Cr(NEt2)4 as single-source precursor. This poor nitrogen incorporation is in agreement with the trends predicted by thermochemical calculations. XPS data, resistivity measurements and annealing experiments suggest that the films grown at 573 K are contaminated by organic species due to incomplete elimination of the ligands. The films deposited at higher temperature crystallize upon annealing at 873 K to form an orthorhombic ternary chromium carbonitride phase. The major volatile by-products of the MOCVD reaction were analyzed by 1H and 13C NMR. Their amount and the quasi-equimolar EtN=CHMe/HNEt2 ratio suggest that most of the NEt2 ligands are removed by a stepwise mechanism which probably occurs with other diethylamido complexes of transition metals when they are used as single-source precursors in MOCVD. The incorporation of the metalloid elements in the film is discussed in comparison with recent literature data. © 1998 John Wiley & Sons, Ltd.
Additional Material:
4 Ill.
Type of Medium:
Electronic Resource
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