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  • 1
    Electronic Resource
    Electronic Resource
    Thermoelectric power of two-dimensional electron gas in heterojunctions at low temperatures (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5080-5083 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-temperature thermopower of two-dimensional electron gas has been calculated by using the expression obtained from the Boltzmann equation. The relevant scattering mechanisms are taken into account. It is found that the calculated thermopower increases almost linearly with temperature in the GaAs-AlGaAs and InGaAs-InP structures, but in all cases the results differ widely from the values given by the Mott formula and also from the experimental values. The results are not influenced by phonon scattering and are slightly affected if the impurity density is changed by the order of magnitude. For high-mobility samples, the experimental values are higher than the theoretical ones and it seems that phonon drag thermopower may account for the difference. For low-mobility samples, however, the experimental values are lower and in some cases decrease with temperature. The present model is then inadequate. Possible refinements of the theory are suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338332
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  • 2
    Electronic Resource
    Electronic Resource
    Reduced intervalley scattering rates in strained Si/SixGe1−x quantum wells and enhancement of electron mobility: A model calculation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3617-3619 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a Si/Si0.5Ge0.5 quantum well grown on a [100] oriented Si0.75Ge0.25 buffer, the four valleys having longitudinal mass normal to the [100] direction are lifted from the remaining two valleys. As a consequence, the intervalley f scattering between these two groups of valleys, the strongest in bulk Si, occurs only when the electrons in the subbands reach a high threshold energy. A high value of mobility limited mainly by acoustic phonon scattering is thus expected and is also obtained from the model calculation described in the present work. It is shown that higher values of the mobility may be obtained for wider wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350919
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  • 3
    Electronic Resource
    Electronic Resource
    Electron mobility in a SixGe1−x quantum well limited by alloy-disorder scattering (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3977-3979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A calculation has been made of the mobility of a two-dimensional electron gas in a quantum well composed of Si and SixGe1−x. Both the type-I and type-II band alignments are assumed and the strain-induced splitting of the six-fold degenerate conduction-band minima is considered. For a type-I alignment, the electrons are confined in the alloy layer and the mobility is severely limited by alloy-disorder scattering. In the case of type-II alignment, the electrons confined in the Si layer are scattered by alloy disorder in the barrier and the mobility becomes higher.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349163
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  • 4
    Electronic Resource
    Electronic Resource
    Low field mobility and thermopower in one-dimensional electron gas (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1070-1074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scattering theory of one-dimensional electron gas formed in a narrow channel GaAs-AlGaAs high electron mobility transistor has been developed. The mobility values for the different scattering mechanisms have been computed and their variation with temperature has been presented. The various scattering processes include acoustic phonon scattering for both deformation potential and piezoelectric scattering mechanisms, impurity scattering, and surface roughness scattering at lower temperatures and polar optic phonon scattering at higher temperatures. The effect of dynamic screening has also been included. Finally, the temperature variation of thermopower for different 1D electron concentrations has been shown and attempts have been made to interpret the results obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346746
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  • 5
    Electronic Resource
    Electronic Resource
    Alloy-disorder-induced intrasubband scattering in a quantum well under an electric field (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3443-3444 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scattering rates in the lowest subband in a quantum well are calculated for alloy-disorder scattering when an electric field is applied perpendicular to the layer plane. Calculations for the InGaAs quantum well indicate that the scattering rate increases with increase in the electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346353
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  • 6
    Electronic Resource
    Electronic Resource
    Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in GaxIn1−xAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 827-829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band gap and the intrinsic carrier concentration in a semiconductor are important material parameters needed in the interpretation of various experimental and theoretical data. In the present work, empirical expressions for both the parameters as a function of alloy composition x and temperature are proposed for GaxIn1−xAs. The calculated results for band gap are in close agreement with the available data, while the same for intrinsic concentration give fair agreement with the data at the two ends of the alloy composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348919
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  • 7
    Electronic Resource
    Electronic Resource
    Alloy scattering limited mobility of two-dimensional electron gas in quaternary alloy semiconductors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 992-994 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theory of alloy scattering of two-dimensional electron gas in quaternary III-V semiconductors is developed by assuming spherically symmetric square scattering potential randomly distributed in the crystal. The theory predicts a temperature-independent mobility. Electron mobilities have been calculated for two-dimensional electrons in Ga1−x Inx P1−y Asy and Ga1−x Inx P1−y Sby, with scattering potentials expressed in terms of the differences in the band gaps, the electron affinities, and the electronegativities of the constituent materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336584
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  • 8
    Electronic Resource
    Electronic Resource
    Linewidth of free excitons in quantum wells: Contribution by alloy disorder scattering (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1110-1112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theory is developed for the luminescence linewidth in a quantum well made of ternaries when the two-dimensionally free excitons undergo alloy disorder scattering. The expression for linewidth shows a L−1 dependence on the well width L for infinite barrier height. For thin wells leakage of wave function into the barrier is considered. A comparison between the experimental data and the present values points out the dominant role of alloy disorder scattering. For wells thinner than 40 A(ring) the calculated values decrease with decreasing well width, indicating the importance of surface roughness scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102583
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  • 9
    Electronic Resource
    Electronic Resource
    Comment on "Electrical properties of epitaxially grown CdTe passivation for long-wavelength HgCdTe photodiodes'' [Appl. Phys. Lett. 65, 2725 (1994)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2453-2454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116165
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  • 10
    Electronic Resource
    Electronic Resource
    Analytical study of the performance of minSIS solar cells with a back surface field (1983)
    Springer
    Applied physics 32 (1983), S. 187-193 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 86.30J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effect of a Back Surface Field (BSF) on the performance of a minority-carrier transparent Semiconductor-Insulator-Semiconductor (minSIS) solar cell has been studied. An analytical one-dimensional model has been developed for the calculation of transport characteristics of minSIS solar cells. Short-circuit current, open-circuit voltage, fill factor and efficiency are then calculated for a sputtered Indium-Tin-Oxide (ITO)-SiO2-pSi-p +Si solar cell under AM1 illumination for different values ofpSi- andp + Si-layer thicknesses. It is found that for a large base thickness, the effect of BSF is not significant; however, for a small thickness all the quantities increase with BSF.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00820259
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