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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 525-528 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 8392-8394 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The high resolution infrared spectrum of the C9 cluster has been measured in direct absorption by infrared diode laser spectroscopy of a pulsed supersonic carbon cluster jet. Fifty-one rovibrational transitions have been assigned to the ν6 (σu ) antisymmetric stretch fundamental of the 1Σ+9 linear ground state of C9. The measured rotational constant [429.30(50) MHz] is in good agreement with ab initio calculations and indicates an effective bond length of 1.278 68(75) A(ring), consistent with cumulenic bonding in this cluster. Several perturbations are observed in the upper state, and the upper- and lower-state centrifugal distortion constants are observed to be anomolously large, evidencing a high degree of Coriolis mixing of the normal modes.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 1724-1729 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The first characterization of the bending potential of the C7 cluster is reported via the observation of the v=11 and v=20 levels of the ν11(πu) bend as hot bands associated with the ν4(σu) antisymmetric stretch fundamental. The lower state hot band rotational constants are measured to be 1004.4(1.3) and 1123.6(9.0) MHz, constituting a 9.3% and 22% increase over the ground state rotational constant [918.89(41) MHz]. These large increases are strong evidence for extremely large amplitude, anharmonic bending modes in this cluster. In addition, quartic and sextic centrifugal distortion constants determined for the ground and ν4=1 states are found to be anomalously large and negative, evidencing strong perturbations between stretching and bending modes.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 3271-3273 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The first infrared spectrum of gas phase, jet-cooled C4 has been measured by high resolution diode laser absorption spectroscopy. Twelve rovibrational transitions are assigned to the ν3(σu) antisymmetric stretch of linear 3Σ−g C4. No evidence is observed for the bent structure of triplet C4 recently observed in a matrix study by Cheung and Graham [J. Chem. Phys. 91, 6664 (1989)]. Indeed, the measured band origin (1548.9368(21) cm−1) and effective ground state C–C bond length [1.304 31(21)A] are consistent with several ab initio predictions of a rigid, linear, cumulenic structure for this cluster radical.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3569-3571 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel method is presented for growth of polycrystalline silicon films on amorphous substrates at temperatures of 540–575 °C. Grain nucleation and grain growth are performed in two steps, using Si nanocrystals as nuclei ("seeds''). The nanocrystal seeds are produced by excimer laser photolysis of disilane in a room temperature flow cell. Film (grain) growth occurs epitaxially on the seeds in a separate thermal chemical vapor deposition (CVD) step, with growth rates 10–100 times higher than similar CVD growth rates on crystal Si. Grain size and CVD growth rates are dependent on seed coverage, for seed coverage 〈0.2 monolayers.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 510-512 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl6, maintaining chlorine and hydrogen surface termination. At 465 °C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475 °C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 7957-7963 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report here on the size-dependent kinetics of exciton recombination in a III–V quantum dot system, InP. The measurements reported include various frequency dependent quantum yields as a function of temperature, frequency dependent luminescence decay curves, and time-gated emission spectra. This data is fit to a three-state quantum model which has been previously utilized to explain photophysical phenomena in II–VI quantum dots. The initial photoexcitation is assumed to place an electron in a (delocalized) bulk conduction band state. Activation barriers for trapping and detrapping of the electron to surface states, as well as activation barriers for surface-state radiationless relaxation processes are measured as a function of particle size. The energy barrier to detrapping is found to be the major factor limiting room temperature band-edge luminescence. This barrier increases with decreasing particle size. For 30 A(ring) particles, this barrier is found to be greater than 6 kJ/mol—a barrier which is more than an order of magnitude larger than that previously found for 32 A(ring) CdS nanocrystals. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physical Chemistry 49 (1998), S. 371-404 
    ISSN: 0066-426X
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Chemistry and Pharmacology , Physics
    Notes: Abstract Ordered arrays, or superlattices, of metallic, insulating, or semiconducting quantum dots, represent an exciting new class of materials. These superlattices are often referred to as artificial solids, in which the nanocrystals take the place of atoms in traditional solids, and the packing arrangement of the nanocrystals determines the unit cell parameters of the superstructure. In this review, we discuss various approaches toward assembling nanocrystal superlattices and we discuss their physical properties.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 8981-8994 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The resonance Raman spectrum of InP nanocrystals is characterized by features ascribable to both longitudinal (LO) and transverse (TO) optical modes. The intensity ratio of these modes exhibits a strong size dependence. To calculate the size dependence of the LO and TO Raman cross sections, we combine existing models of Raman scattering, the size dependence of electronic and vibrational structure, and electron vibration coupling in solids. For nanocrystals with a radius 〉10 Å, both the LO and TO coupling strengths increase with increasing radius. This, together with an experimentally observed increase in the electronic dephasing rate with decreasing size, allows us to account for the observed ratio of LO/TO Raman intensities. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 107 (1985), S. 7779-7780 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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