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1

Digitale Medien

Proton-implantation-induced nanosized Ge crystal formation in SiO2:GeO2 glasses (1996)

Kawamura, Ken-ichi ; Hosono, Hideo ; Kawazoe, Hiroshi

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 1357-1363

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Nanometer-sized crystalline Ge colloid particles in 9SiO2–1GeO2 glasses were formed by implantation of protons at 1.5 MeV without post-thermal annealing. Although oxygen-deficient type point defects associated with Ge ions were primarily formed to fluences (approximately-less-than)1×1017 cm−2, the formation of Ge fine crystalline particles was observed for fluences (approximately-greater-than)5×1017 cm−2. No formation of Ge colloids and the Ge-related point defects were noted for implantation of 1.5 MeV He+ to a fluence of 1×1018 cm−2. The depth of Ge colloid formation layers was 22–26 μm from the implanted surface. This depth region agreed well with the peak region of electronic energy deposition. Ge–OH groups were formed preferentially over Si–OH groups upon implantation of protons and the decay curve upon isochronal annealing was close to that of the optical absorption at ∼3 eV, which was attributed to nanometer-sized Ge. A red photoluminescence peaking at ∼1.9 eV was observed for all the implanted substrates. A tentative formation mechanism of Ge colloids in these glasses was proposed. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.362935

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2

Digitale Medien

Fast proton conducting glasses: Creation by proton implantation and a requirement for fast proton conduction (1997)

Hosono, Hideo ; Kawamura, Ken-ichi ; Kawazoe, Hiroshi

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 81 (1997), S. 1296-1301

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Fast proton conducting glasses have been obtained in Mg(PO3)2 glasses by implantation of protons at 120 keV to a fluence of 1×1018 cm−2. The dc conductivity and the activation energy of the conduction in the implanted glasses are 5×10−4 s cm−1 at room temperature and 0.18 eV, respectively. No fast proton conduction was observed for H+-implanted SiO2 and Ca(PO3)2 glasses. Infrared absorption spectra revealed that implanted protons are present in the form of X–OH (X=Si or P) in SiO2 and Ca(PO3)2 glasses implanted with H+ ions to 1×1018 cm−2, but exist as POH groups and molecular water H2O in Mg(PO3)2 glasses. A quantitative discussion on the proton conductivity led to the conclusion that the coexistence of acidic groups such as POH and molecular water H2O is a structural requirement for the emergence of fast proton conduction in oxide glasses. The formation of H2O in Mg(PO3)2 was understood by considering its thermodynamic stability over SiO2 and Ca(PO3)2 glasses. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.363908

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3

Digitale Medien

Nanometer-scale heterogeneity in SiO2–GeO2 glass preforms and fibers prepared by vapor phase axial deposition method (1996)

Hosono, Hideo ; Kawamura, Ken-ichi ; Kawazoe, Hiroshi ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 3115-3117

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Nanometer-scale heterogeneity of Ge ions in SiO2:GeO2 (10–15 mol %) glass preforms prepared by vapor phase axial deposition method and in optical fibers drawn from the preform was found by transmission electron microscopic observation. Both preforms and fibers were comprised of 8–10 nm sized Ge-rich and Si-rich phases. Observation of Ge E′ centers in the as-prepared state and the formation of Ge E′ centers with light illumination with 5 eV-light may be understood by the occurrence of these heterogeneity. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.363122

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4

Digitale Medien

Band gap engineering, band edge emission, and p-type conductivity in wide-gap LaCuOS1−xSex oxychalcogenides (2002)

Ueda, Kazushige ; Hosono, Hideo

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 4768-4770

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The preparation of LaCuOS1−xSex solid solutions (x=0.0, 0.25, 0.5, 0.75, and 1.0) was attempted to control their energy gap and band edge emission energy. X-ray diffraction analysis revealed that the lattice constant of LaCuOS1−xSex increased linearly with increasing x, indicating the formation of a complete solid solution in the LaCuOS–LaCuOSe system. The energy gap estimated from the diffuse reflectance spectra varied continuously from ∼3.1 eV for x=0 to ∼2.8 eV for x=1. The sharp emission near the absorption edge was observed in all samples at room temperature under ultraviolet light irradiation. p-type electrical conduction in these materials was confirmed by Seebeck measurements, and the conductivity was enhanced by substitution of Sr for La. These results demonstrated that the formation of the solid solutions enabled band gap engineering in LaCuOS1−xSex oxychalcogenides keeping their band edge emission feature and p-type conductivity. © 2002 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1456240

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5

Digitale Medien

Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2 (2000)

Yanagi, Hiroshi ; Inoue, Shin-ichiro ; Ueda, Kazushige ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 4159-4163

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Electrical and optical properties of CuAlO2, a p-type conducting transparent oxide, were examined for the thin films prepared by the pulsed laser deposition technique. The indirect and direct allowed optical band gaps were evaluated to be ∼1.8 and ∼3.5 eV, respectively. The conductivity at 300 K was ∼3×10−1 S cm−1 and its temperature dependence is of the thermal-activation type (activation energy (approximate)0.2 eV) at temperatures 〉220 K but is of the variable-range hopping type (log σ∝T−1/4) at 〈220 K. It was inferred that an admixed state of Cu 3d and O 2p primarily constitutes the upper valence band, which controls transport of positive holes, from a combined information on ultraviolet photoemission spectrum with x-ray photoemission spectrum. An energy band calculation by full-potential linearized augmented plane wave method substantiated the experimental findings. The present results gave a solid basis for our working hypothesis [Nature (London) 389, 939 (1997)] for chemical design of p-type conducting transparent oxides. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1308103

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6

Digitale Medien

Photochemistry in phosphorus-doped silica glass by ArF excimer laser irradiation: Crucial effect of H2 loading (2002)

Hosono, Hideo ; Kajihara, Koichi ; Hirano, Masahiro

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 4121-4124

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A striking difference in photochemistry induced by ArF excimer laser irradiation was found between H2-unloaded and H2-loaded P-doped SiO2 glasses. Although a pair of phosphorus-electron center and phosphorus-oxygen-hole center (POHC) were produced in the former, PHO2 (pyramidal shape) and PO2 (planar) centers were created instead of the POHC in the latter. The present finding strongly suggests that H2 loading treatment of P-doped SiO2 at ambient temperature induces a drastic structural alternation around phosphorus, leading to new precursor structures which account to the photosensitivity of the materials. © 2002 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1456253

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7

Digitale Medien

Long lasting phosphorescence and photostimulated luminescence in Tb-ion-activated reduced calcium aluminate glasses (1999)

Kinoshita, Takeru ; Yamazaki, Masaaki ; Kawazoe, Hiroshi ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 3729-3733

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Long lasting phosphorescence (LLP) and photostimulated luminescence (PSL) were found in reduced calcium aluminate glasses activated with Tb3+ ions. The LLP from Tb3+ was observed by illuminating the Tb3+ 4f→5d charge transfer band with ultraviolet (UV) 254 nm light, while the PSL was seen by stimulating the UV-illuminated glasses with 633 nm light. The decay curve of the LLP was fitted with a second-order kinetic for the initial period (0〈t〈20 min) and a first-order kinetic for the later (t〉30 min). An electron paramagnetic resonance (EPR) signal, which is attributed to an F+-like center associated with Ca2+ ions, was induced by illumination with UV light and its intensity decay was fitted with a first-order kinetic similarly to the later stage of the LLP. The appearance of the PSL by illumination is accompanied by a distinct intensity reduction of the EPR signal due to the F+-like center. The thermoluminescence spectra of the specimen illuminated with UV light at 77 K consist of two components peaking at ∼240 and ∼390 K. The low temperature component and the high temperature component were attributed to an F-like center and an F+-like center, respectively. These results lead to a conclusion that electrons of the F-like center and the F+-like center contribute predominantly to the emergence of the LLP and the PSL, respectively. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.371243

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8

Digitale Medien

ArF excimer laser irradiation effects in AlF3-based fluoride glasses for vacuum ultraviolet optics (1999)

Hosono, Hideo ; Mizuguchi, Masafumi ; Kawazoe, Hiroshi

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 3038-3043

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Color center formation in AlF3–YF3–RF2 (R=alkaline earth metal) glasses doped with PO2.5 (0–3 mol %) by irradiation with ArF excimer laser light was examined by optical absorption (vacuum ultraviolet–visible) and electron paramagnetic resonance (EPR) spectroscopies. Concentrations of impurity iron in all the glasses and oxygen in the P-free samples were ∼0.2 and ∼450 ppm, respectively. Optical absorption ranging from 2–8 eV was induced via one-photon absorption processes. The optical band dominating the transmission loss at 193 nm has a peak at 5 eV in the P-free glasses or a peak at 6.9 eV in the P-doped glasses. The origins of the 5 and 6.9 eV bands were tentatively ascribed to an oxygen-related hole center giving an EPR signal with a width of 7.2 mT at g=2.0097 and P E′ center giving a hyperfine doublet with a separation of ∼70 mT. Provided these correspondences, then the values of oscillator strength for the 5 and 6.9 eV bands were calculated as ∼0.15 and ∼0.1, respectively. No formation of color centers associated with intrinsic constituents such as Al, Y, R, and F ions, was observed. The present results suggest that the reduction of impurity oxygen content is a route to effectively suppress the solarization in the P-free AlF3-based glasses. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.369640

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9

Digitale Medien

Ion-beam doping of silver in amorphous As2S3 thin films (2002)

Suzuki, Takenobu ; Hosono, Hideo

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 92 (2002), S. 1821-1824

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Double layers of metallic Ag/amorphous (a-)As2S3 on silica substrates were irradiated with 300 keV He+ ions to examine doping of Ag+ into a-As2S3 by dense electronic excitation. The irradiating ions passed through the double layers and came to rest in the silica substrates. Thus, energy deposition from energetic He+ ions into the double layers was completely almost due to electronic processes (99.4%). Ionized silver found to diffuse into a-As2S3 as a result of electronic excitation by ion-beam irradiation. Rutherford backscattering spectroscopy revealed that the highest concentration of silver doped into a-As2S3 was 35 at. %. When the resulting Ag-doped a-As2S3 was illuminated by band gap light, photo-surface-deposition of metallic silver particles, which was not observed for Ag photo-doped specimens, was observed. © 2002 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1492862

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10

Digitale Medien

Preparation of n-type conductive transparent thin films of AgInO2:Sn with delafossite-type structure by pulsed laser deposition (2000)

Ibuki, Shuntaro ; Yanagi, Hiroshi ; Ueda, Kazushige ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 3067-3069

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Sn-doped AgInO2 thin films were prepared on α-Al2O3(0001) single-crystal substrates by pulsed laser deposition. The films prepared under optimized conditions have high optical transmittance up to the near-ultraviolet region and high electrical conductivity. The optical band gap was estimated to be ∼4.1 eV, and electrical conductivity was 7.3×101 S cm−1 at 300 K. The carrier concentration and Hall mobility at 300 K were 3.3×1020 cm−3 and 1.4 cm2 V−1s−1, respectively. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1287404

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