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  • 1
    Electronic Resource
    Electronic Resource
    Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3817-3821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of the strongly lattice mismatched (6.5%) layered chalcogenides InSe and GaSe on each other is obtained with the concept of van der Waals epitaxy as proven by low-energy electron diffraction and scanning tunnel microscope. InSe/GaSe/InSe and GaSe/InSe/GaSe quantum well structures were prepared by molecular beam epitaxy and their interface properties were characterized by soft x-ray photoelectron spectroscopy. Valence and conduction band offsets are determined to be 0.1 and 0.9 eV, respectively, and do not depend on deposition sequence (commutativity). As determined from the measured work functions the interface dipole is 0.05 eV; the band lineup between the two materials is correctly predicted by the Anderson model (electron affinity rule). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363335
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  • 2
    Electronic Resource
    Electronic Resource
    Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5718-5722 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of the layered compound semiconductors MoTe2 and WSe2 by molecular beam epitaxy. Growth could only be achieved after deposition of a nucleation layer of CdTe at room temperature. After nucleation subsequent deposition steps followed at increased substrate temperatures (T=170–370 °C) in order to increase the crystalline quality of the films. The deposited films were investigated after each growth step by low energy electron diffraction and photoelectron spectroscopy. The diffraction pattern indicates a facetting of the (111) oriented film surfaces. From photoemission data we exclude interface reactions between substrate and film material. Transmission electron microscopy was used to examine the film morphology after the UHV experiments. The mean diameter of the film crystallites is 200–400 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363624
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  • 3
    Electronic Resource
    Electronic Resource
    Partial density of states in the CuInSe2 valence bands (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7806-7809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The valence band spectra of a vacuum cleaved CuInSe2 (011) surface were measured with synchrotron radiation at photon energies between 16 and 95 eV. The strong dependence of the photoionization cross section of atomic levels between 28 and 60 eV is used to divide the valence band emissions into contributions from Se 4p and Cu 3d states in order to map the respective partial density of states. The derived partial density of Cu 3d states to the total valence band density of states is around 50% in the upper part of the valence band and about 75% at its maximum corresponding to non-bonding Cu d states. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365390
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  • 4
    Electronic Resource
    Electronic Resource
    Chemical interaction of Na with cleaved (011) surfaces of CuInSe2 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5039-5043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study the beneficial effect of sodium-containing substrate material on the photovoltaic properties of thin-film CuInSe2 solar cells the chemical interaction of Na with CuInSe2 has been investigated by synchrotron excited photoelectron spectroscopy. A clean CuInSe2 (011) surface was prepared by cleaving an oriented single crystal in UHV. The cleaved surface exhibits an electron affinity of χ≈4.6 eV. The Se 3d level shows a surface core level shift of −0.4 eV. Na was sequentially deposited in UHV in small steps from a commercial dispenser source. Initially ionized Na adsorbs on the surface leading to a shift of the surface Fermi level by 0.3 eV closer to the conduction band. Removal of Cu from the surface is observed. For higher Na deposition a chemical reaction of Na with the CuInSe2 surface occurs leading to the formation of metallic indium and Na2Se. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363549
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  • 5
    Electronic Resource
    Electronic Resource
    Surface photovoltage measurements on pyrite (100) cleavage planes: Evidence for electronic bulk defects (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5800-5808 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent contactless surface photovoltage measurements by photoelectron spectroscopy have been performed on cleaved (100) surfaces of pyrite (FeS2) single crystals. The results have been fitted by thermionic emission, recombination, and tunneling models for the majority carrier transport to the surface. Neither of them is able to explain the small photovoltages consistently. By calculating electronic defect levels due to the sulfur deficiency of pyrite a high number of defect states in the band gap is obtained. As a consequence a nonuniform depletion layer is expected with a part of the band bending potential falling off at a very small distance near the surface. The small photovoltages can be explained by a tunneling of majority carriers through the narrow barrier and by recombination losses due to the defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358393
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  • 6
    Electronic Resource
    Electronic Resource
    Formation and electronic properties of the CdS/CuInSe2 (011) heterointerface studied by synchrotron-induced photoemission (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 731-738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heterointerface p-CuInSe2/CdS was investigated by soft x-ray photoelectron spectroscopy. CdS was deposited sequentially in steps onto CuInSe2 (011) cleavage planes at room temperature (RT) and at elevated temperatures ((approximately-greater-than)120 °C). At RT a nonreactive interface to cubic CdS is formed. The valence band and conduction-band discontinuities are determined to be 0.8 and 0.7 eV, respectively. A band bending of 0.9 eV is deduced for the p-type substrate. Annealing to temperatures above 120 °C leads to the formation of a CuxS reactive layer at the interface. As a consequence the valence-band offset and band bending is found to be considerably reduced. The experimentally determined band energy diagram is in agreement with heterojunctions of zincblende-type semiconductors, and its consequences for solar cells are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359583
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  • 7
    Electronic Resource
    Electronic Resource
    Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy. II. Junction characterization (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7814-7820 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The junction properties of GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy have been characterized by photoelectron spectroscopy and surface photovoltage measurements (SPV). The surfaces of p-WSe2 substrates doped with Se excess convert to n doping during annealing at T≥720 K, leading to a SPV of 330 mV. Deposited p GaSe forms an n-p heterodiode opposing the p-n homodiode within the substrate. Promising results are obtained for n-WSe2/p-GaSe heterointerfaces with SPV of at least 0.3 eV. The valence band and conduction band offsets are 0.6 and 0.2±0.1 eV, respectively, in accordance with the Anderson model of heterojunction formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356563
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  • 8
    Electronic Resource
    Electronic Resource
    Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy. I. Growth conditions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7805-7813 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial GaSe films have been prepared on WSe2 (0001) substrates with 14% lattice mismatch and characterized by photoelectron spectroscopy, electron diffraction, and ex situ by tunneling microscopy. The films grow in the Frank–van der Merve growth mode. The best films with perfect azimuthal orientation are formed after an annealing step at 720 K. The basic mechanisms of this van der Waals epitaxy are qualitatively discussed in terms of thermodynamic and kinetic parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356562
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  • 9
    Electronic Resource
    Electronic Resource
    Band lineup of a SnS2/SnSe2/SnS2 semiconductor quantum well structure prepared by van der Waals epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6550-6556 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum well composed of layered semiconductors and SnSe2 (Eg=1.03 eV) and SnS2 (Eg=2.18 eV) was grown in several steps by van der Waals epitaxy. After each growth step the electronic structure was characterized by ultraviolet and x-ray photoemission spectroscopy. From these measurements, bandbending and the valence-band offset were determined on both sides of the quantum well. The results show that both wells are of the same magnitude, hence indicating commutativity of the band offset. Small interface dipoles (0.11–0.19 eV) were detected at the interfaces, which could be identified as quantum dipoles. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370160
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  • 10
    Electronic Resource
    Electronic Resource
    Crystallization of layered metal-dichalcogenides films on amorphous substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3474-3476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anisotropic materials with layered structure, like MoS2 and WSe2, play an important role in a number of technologies. Some of these applications (lubrication, photovoltaics) require polycrystalline films oriented with their c axis perpendicular to the substrate surface (type-II texture), which is the thermodynamically favorable texture. However, films with the substrate (parallel)c (type-I texture) are usually obtained. We report that an ultrathin (〈10 nm) metal-chalcogenide interlayer eutectics, like Ni3Se2, SnSe〈thin〉2, or InSe disentangle the growth mode of the film from the underlying amorphous substrate, and hence, WSe2 films with a perfect type-II texture and crystallites at least a few mm2 large are obtained at temperatures as low as 700 °C (van der Waals rheotaxy–vdWR). The mechanism for this growth mode is proposed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115251
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