ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract We demonstrate a method for successfully controlling carbon incorporation in AlAs layers grown by atomic layer epitaxy (ALE) using various GaAs substrates with different orientations. The number of alkyl radicals attached to an Al atom at the surface, which is a main factor in carbon incorporation, can be intentionally controlled by changing substrate orientation. We found that the carbon incorporation in ALE-AlAs using the (3 1 1)B surface is 2 x 1017,cm-3, which is the lowest value ever reported for ALE-AlAs that satisfies one-monolayer self-limiting growth conditions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008991717393
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