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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 217-223 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an ultrahigh-vacuum (UHV) sputtering system, we could grow two new methods of polycrystalline silicon films. The one is as-deposited polycrystalline silicon on glass at substrate temperatures under 500 °C. The other is solid-phase-crystallization by thermal annealing of as-deposited amorphous silicon films in a UHV. As-deposited polycrystalline silicon films were oriented to (220) and grain sizes were determined from half-width of x-ray diffraction to be about 40 nm. From the deposition temperature dependence of the x-ray diffraction peak intensity, the activation energy of the crystalline growth was calculated to be about 0.6 eV. Hydrogen atoms in the sputtering gas lower the reproducibility of as-deposited poly-Si. Polycrystalline silicon films produced by thermal annealing of as-deposited amorphous silicon films at 550 °C in UHV have a (111) orientation. Field-effect mobilities of the as-deposited polycrystalline silicon film and the polycrystalline silicon film by UHV thermal annealing were 5 and 18 cm2/V s, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 31-33 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effect of hydrogen ion shower doping on polycrystalline silicon thin-film transistors (p-Si TFTs). Hydrogen atoms were introduced to the channel region of p-Si TFTs by PH3/H2 ion shower doping of the source/drain contact. Hydrogen concentration in the channel region can be controlled by altering the gate metal thickness. Hydrogen atoms affect the TFT's threshold voltage shifts until it becomes negative, in n-type TFTs. The threshold voltage shift depends on the hydrogen content of the channel region in p-Si TFTs. This is explained by the existence of Si−3 trap states in the grain boundaries. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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