Bibliothek

Sprache
Bevorzugter Suchindex
Ergebnisse pro Seite
Sortieren nach
Sortierung
Anzahl gespeicherter Suchen in der Suchhistorie
E-Mail-Adresse
Voreingestelltes Exportformat
Voreingestellte Zeichencodierung für Export
Anordnung der Filter
Maximale Anzahl angezeigter Filter
Autovervollständigung
Feed-Format
Anzahl der Ergebnisse pro Feed
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
  • 1
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 131-137 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The gauge-origin independent expression for the relativistic nuclear magnetic shieldings was derived from the Douglas-Kroll transformation of the no-pair equation and the use of the gauge including atomic orbitals (GIAOs) proposed by London. Using our expression the relativistic spin free effect on the nuclear magnetic shieldings was evaluated for the four hydrogen halide molecules, HF, HCl, HBr, and HI, at the coupled Hartree-Fock (CHF) level with uncontracted Cartesian Gaussian-type basis sets. It was found that the GIAO-CHF results are very similar to the shielding values calculated with the fixed gauge origins at the halogen nuclei. The calculated results showed that the spin independent relativistic effect produces high-field shifts at both the halogen nuclei and protons in the hydrogen halides. However, the computed spin free effect was too small to interpret the very large upshield proton shifts observed in HBr and HI molecules. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 2
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 3532-3539 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The expression for the analytical derivatives of the second-order correlation energy was derived for a system under the spin-dependent perturbations, and it was applied to the correlated calculation of the 3JHH's in ethane, methanol, and methylamine. The calculation showed that the addition of tight s-type functions to the basis set considerably affects the Fermi contact (FC) contribution. Furthermore, the third- and fourth-order correlations were also evaluated for the FC contribution with the finite perturbation theory. The three noncontact contributions were computed at the Hartree–Fock (HF) level. The total contribution to the 3JHH in ethane was significantly lower than the experimental value. The calculated 3JHH's in methanol and methylamine were nearer to the experimental couplings than in ethane. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 3
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 457-457 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 4
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 3854-3862 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: A Schrödinger-Pauli type two-component perturbation theory has been presented for the calculation of relativistic effects of nuclear magnetic shieldings. The expression for the relativistic nuclear magnetic shieldings are derived from the Douglas-Kroll transformation of the no-pair equation for a molecule, which bears a nuclear magnetic dipole moment, and which is placed in an external magnetic field. The exact form of the relativistic kinetic energy is included in the eigenvalue equation which is solved variationally. We calculated the relativistic mass correction effect on the nuclear magnetic shieldings in the four hydrogen halide molecules, HF, HCl, HBr, and HI, at the coupled Hartree-Fock (CHF) level. It was shown that the mass correction effect increases the nuclear magnetic shieldings of the halogen nuclei. The increments in the shieldings are proportional to about the third power of the atomic numbers of the halogen nuclei. This increase in the shieldings results from the mass correction effect concentrating the electrons in the vicinity of the heavy nucleus, the so-called relativistic contraction. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 5
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 2987-2987 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 6
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 6597-6600 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Ab initio self-consistent-field (SCF) and electron correlation calculations have been carried out for the dihedral angle dependence of the vicinal proton–proton coupling constants, 3JHH, in ethane molecule. The four contributions to 3JHH, (JFC, JSD, JOP, and JOD) have been computed with the three different basis sets, [5s2p1d/2s1p], [5s3p1d/3s1p], and [7s4p2d/5s2p]. The Fermi contact (FC) contribution was largest and the spin–dipole (SD) contribution was smallest. The FC and orbital paramagnetic (OP) contributions showed large basis set dependence, but the SD and orbital diamagnetic (OD) contributions presented little basis set dependence. The calculated total SCF contribution to 3JHH was higher than the experimental coupling. Using the Møller–Plesset perturbation theory we have introduced electron correlation effects on the FC and OP terms. The correlation effects on the OP term was shown to be negligible. The second-order correlation in the FC term was very large and amounted to half of its SCF value in magnitude with opposite sign. However, the third-order correlation in the FC contribution was small. Unfortunately, the calculated 3JHH value including correlation corrections through third order was too small compared to the experimental one. The poor agreement between calculation and experiment is claimed to be due to higher than third-order correlations in the FC term. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1113-1115 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have directly observed the energy distributions of hot electrons in Si metal–oxide–semiconductor field-effect transistors. We used a lateral hot-electron transistor employing two potential barriers (an emitter barrier and a collector barrier) that divided the Si surface into three regions (the emitter, base, and collector). For an emitter-base voltage of −1.04 V, hot electrons with an excess energy of 0.7 eV were detected at the collector. The ratio of hot electrons to the injected electrons was 1.3%. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 301-303 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated a chloromethylated calixarene, p-chloromethylmethoxcalix[n]arene (CMC[n]AOMe) (n=5,6,7), as a negative resist in electron-beam lithography. Each CMC[n]AOMe resist has a resolution of about 12 nm and a sensitivity of about 0.8 mC/cm2 which varies slightly with n (or molecular weight). A sub-10-nm Si wire has been fabricated by halide plasma etching and a CMC[n]AOMe resist as an etching mask. Because the resist pattern edge is smooth, Si wires with 7-nm width and 10-μm length were performed without any breaking. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2618-2620 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Characteristic length of hot-electron transport in an inversion layer at a Si surface is estimated by using lateral hot electron transistor, which has an upper gate and two lower gates. The inversion layer formed by biasing the upper-gate voltage is separated into three channel regions (the emitter, collector, and base) by the two lower gates. We find that the characteristic length depends on both the upper-gate voltage and the injection energy and ranges from 19 to 27 nm. These results show that hot electrons are affected by electron–electron scattering or surface–roughness scattering and that hot-electron transport plays a crucial role in Si metal–oxide–semiconductor field effect transistors with gate lengths of 20 nm or less. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3555-3557 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A single-electron memory that utilizes carrier traps in a silicon nitride layer is proposed and experimentally demonstrated. The proposed device consists of an insulating three-layered memory node structure formed on a silicon substrate and a highly sensitive aluminum single-electron transistor that detects the written information. Successful memory operation is demonstrated with two types of write modes (slow/rapid) that depend on the state of the Si channel underneath. Carrier retention time is estimated to be around 45 min. Possibilities for both destructive and nondestructive readout are discussed. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...