ZIB

Treffer pro Seite

Treffer 1 - 1 | 1 Treffer

Sortierung

Digitale Medien

Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide (1994)

Schadt, M. ; Pensl, G. ; Devaty, R. P. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 65 (1994), S. 3120-3122

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Hall effect measurements in a Hall-bar configuration are performed on nitrogen-doped n-type bulk 4H, 6H, and 15R SiC single crystals cut into small parallelepipeds with their longest edges either parallel or perpendicular to the cˆ axis. In the temperature range investigated (40–700 K), an anisotropy of the electron Hall mobility is observed in all three polytypes. While the mobility perpendicular to the cˆ axis—with magnetic field perpendicular or parallel to the cˆ axis—is greater than the mobility parallel to the cˆ axis for 6H and 15R SiC, 4H SiC shows the opposite behavior. © 1994 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.112455

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Treffer 1 - 1 | 1 Treffer