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  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 58 (1994), S. 59-62 
    ISSN: 1432-0630
    Schlagwort(e): 78.70.Bj ; 72.80.Ey
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Measurements of the positron lifetime and Doppler-broadened annihilation-radiation have been performed in electron-irradiated GaAs. The positron lifetime at the irradiation induced defects was ∼0.250 ns at 300 K. The defect clustering stage was found to occur at around 520–620 K, and the coarsening and annealing stage is believed to be above 620 K. Similar annealing stages were also observed in GaAs lightly doped with Si (0.2×1018 cm−3). Both the lifetime and the S-parameter in the irradiated GaAs were found to decrease with temperature from 300 K to 100 K, suggesting the coexistence of shallow traps in electron irradiated GaAs.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    ISSN: 1432-0630
    Schlagwort(e): 78.70.Bj ; 72.80.Ey
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The positron lifetime of undoped Liquid-Encapsulated Czochralski (LEC)-GaAs and Si-doped (1.3×1018 cm−3) LEC-GaAs was measured before and after irradiation with protons (dose 1×1015/cm2, 15 MeV). In Si-doped GaAs, the decrease of positron lifetime at temperatures between 10 and 300 K are due to the decrease of the positron-diffusion length and the increase of the effective shallow traps such as antisite GaAs. The annealing stage of the proton-irradiation-induced defects which show the different behavior from that of electron-irradiation-induced defects suggests that proton irradiation creates more complicated defect complexes, containing vacancies rather than isolated vacancy-type defects or simple complexes which have been observed during electron-irradiation processes. Above 700 K, proton-irradiation-induced defects such as vacancy-type defects and simple vacancy complexes are almost annealed out, while Si-induced defects such as SiGa-VGa complexes cannot be annealed out above 973 K.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Weinheim : Wiley-Blackwell
    Acta Polymerica 48 (1997), S. 164-168 
    ISSN: 0323-7648
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Physik
    Notizen: Poly(methacrylic acid) (PMA) and poly(acrylamide) (PAAm) with a small mole fraction of naphthol (NpOH) residues were prepared by polymerization of methacrylic acid or acrylamide with three position isomers, methacryloylaminonaphthol. The substituent effect on the apparent pK values (pKobsd), determined by spectroscopic pH titrations in aqueous solution, was observed for the NpOH-labeled PAAm. The electrostatic surface potential (ψ) for PMA was calculated from the difference in the pKobsd values for the labeled PMA and PAAm. The obtained ψ value decreased as the spacing between the OH moiety and the polymer main chain increased. This clearly indicates that the ψ value is a sensitive function of the distance from the polyion surface.
    Zusätzliches Material: 3 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    New York : Wiley-Blackwell
    Journal of Polymer Science Part B: Polymer Letters 3 (1965), S. 383-387 
    ISSN: 0449-2986
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie
    Zusätzliches Material: 3 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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