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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis and Characterization of Soluble Alternating Aromatic Copolyimides (1994)
    s.l. : American Chemical Society
    Macromolecules 27 (1994), S. 3459-3463 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00091a003
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Transport of Metals by Gaseous Chlorides at Elevated Temperatures (1958)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 62 (1958), S. 877-878 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150565a035
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Disorder/order/disorder Ga0.5In0.5P visible light-emitting diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5420-5422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new Ga0.5In0.5P light-emitting diode (LED) with order/disorder/order (DOD) structure has been fabricated by metalorganic chemical vapor deposition. Growth temperature and dopant concentration were successfully used as growth parameters to obtain a heterojunction-equivalent structure. From the 77 K photoluminescence measurement, three peak energies of the DOD structure can be resolved clearly. It is shown that the DOD structure is equivalent to the double-heterojunction structure. The wavelength of the LED occurring at 667 nm coincides with the ordered active layer emission. The light intensity of the DOD LED is seven times stronger as compared with that of the homojunction disordering LED at the injection current of 10 mA. These results demonstrate that the DOD structure can provide good electrical and optical confinements and can be served as heterojunction-equivalent applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351982
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  • 4
    Electronic Resource
    Electronic Resource
    Thermodynamic properties and crystallization kinetics of glass-forming undercooled liquid Au-Pb-Sb alloys (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4494-4502 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heat capacities of liquid and crystalline Au-Pb-Sb alloys in the glass-forming composition range were measured with droplet emulsion and bulk samples. Based on the measured Cp data, the entropy, enthalpy, and Gibbs free-energy differences between the eutectic solid mixture and undercooled liquid were determined as a function of temperature over ∼60% of the undercooling range below the liquidus temperature and compared with theoretical predictions. The results indicate an isentropic temperature at 313 (±5) K, which agrees well with experimental data for the glass transition. The thermodynamic evaluation was applied further to develop a kinetics analysis of the nucleation undercooling response during cooling. Use of different approximations for the Gibbs free energy leads to a variation of the prefactor terms of six orders of magnitude for classical nucleation theory and, consequently, large variation in calculated transformation diagrams which is more pronounced with increasing undercooling. Extrapolations into the glass-forming temperature range and the effects of viscosity, transient nucleation, and estimated Kauzmann temperatures on the crystallization kinetics at high undercooling have been evaluated. This analysis reveals the importance of using measured values of thermophysical properties, even if they represent a limited temperature range at modest undercooling, rather than model approximations in order to obtain reliable evaluations of crystallization kinetics at high undercooling in the glass-forming temperature range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346200
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Laser heating of a sintered oxide superconductor (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1915-1918 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy, in which a laser beam serves the dual role of exciting the Raman spectrum and annealing the sample, shows promise as a means of investigating oxygen effects in the oxide superconductors. A technique is described, based on measurements of the ratios of the areas of corresponding peaks in the anti-Stokes and Stokes spectra, whereby the temperature of the illuminated region of the sample can be determined as a function of the power in the incident laser beam. It is found that, for sintered samples of bismuth 2122, a small correction must be made for the departure from thermodynamic equilibrium induced by the pumping effect of the laser beam.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349473
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  • 6
    Electronic Resource
    Electronic Resource
    Ordering effect on the performance of Ga0.5In0.5P visible light-emitting diodes grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1513-1516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering effect on the performance of Ga0.5In0.5P visible light-emitting diodes (LEDs) has been reported. The GaInP LEDs were fabricated on GaAs substrates at 675 and 730 °C by metalorganic chemical vapor deposition, with ordered and disordered structures. A sample with an ordered structure shows anomalous device performance, where emitting wavelength change, low light intensity, and early saturation were observed from the current-light intensity relationship. From the current-voltage measurement, it was found that the sample with ordered structure also yields an inferior diode performance. These phenomena could be due to the existence of antiphase boundaries in the ordered structures. The antiphase boundaries can act as generation-recombination centers and result in the anomalous behavior of the ordered GaInP LED.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351220
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  • 7
    Electronic Resource
    Electronic Resource
    Indium phosphide on silicon heteroepitaxy: Lattice deformation and strain relaxation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3338-3342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice deformation and strain relaxation in epitaxial InP directly on (001) Si are studied as a function of layer thickness using x-ray diffraction and photoluminescence (PL) techniques. The heteroepilayers were grown by low-pressure organometallic vapor-phase epitaxy and showed good quality. We find that mismatch-induced compressive strains are still present in InP layers with a thickness less than 1 μm. The rate of strain release is much lower than the prediction based on the equilibrium theory. With increasing thickness above 1.1 μm, the InP/Si layers suffer in-plane tensile strains as a result of differential thermal contraction during the cooling process after growth. Fairly good agreement is found between the PL and x-ray data for the strain variations in the InP/Si heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346386
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  • 8
    Electronic Resource
    Electronic Resource
    A detailed Hall-effect analysis of sulfur-doped gallium antimonide grown by molecular-beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 131-137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data are presented for the Hall coefficient and the apparent Hall mobility over the temperature range 160–500 K for five samples of molecular-beam epitaxially grown sulfur-doped GaSb. The donor concentration of the different samples varied between 3.3×1017 and 7.5×1016 cm−3, and the native acceptor concentration between 8×1016 and 1.2×1016 cm−3. The samples show a large spread in the apparent carrier activation energy. A two valley compensated conduction model is presented that shows that the variation in apparent carrier activation energy results from different compensation ratios in the samples. This model also shows that the constant value of the Hall coefficient observed at high temperatures is not due to donor exhaustion but carrier promotion to the lower mobility L1 band. Using constraints provided by secondary ion mass spectrometry and capacitance-voltage measurements on the samples, as well as growth data, it is shown that a narrow spread of values for the donor binding energy around 60 meV is required to account for the data. It is suggested that this spread is due to the formation of a donor band and to the strongly attractive central cores of the sulphur donors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347098
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  • 9
    Electronic Resource
    Electronic Resource
    Photoionization of the 3σ and 1π orbitals of CH (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 536-540 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report the results of theoretical studies of photoionization cross sections and photoelectron angular distributions for the 3σ and 1π levels of CH leading to the A 1Π, a 3Π, and X 1Σ+ molecular ions. The calculations employed multiplet-specific Hartree–Fock potentials and numerical photoelectron continuum orbitals, obtained using the iterative Schwinger variational method. Noticeable nonstatistical behavior of the cross sections is seen for the 3σ level near threshold, although deviations are not significant at higher photon energies. A comparison with some previous theoretical studies is made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458456
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  • 10
    Electronic Resource
    Electronic Resource
    Ion rotational distributions for near-threshold photoionization of H2O (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 7848-7851 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ion rotational distributions for single-photon VUV photoionization of the 1b1 orbital of the X˜ 1A1 ground state of the jet-cooled water are reported. These spectra reveal significant type a transitions which are seen to arise from odd angular momentum components of the photoelectron matrix element. The resulting photoionization dynamics are quite nonatomic-like.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462381
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