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  • 1
    ISSN: 0550-3213
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 287-288 (Aug. 1998), p. 267-268 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Cellular and molecular life sciences 40 (1984), S. 202-203 
    ISSN: 1420-9071
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary The cells in S-phase at the time of a short treatment with cycloheximide, inducing reversible arrest of the cell cycle, enter mitosis before those in G2 and are divided into 2 subpopulations when cell proliferation resumes.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1432-0630
    Keywords: PACS: 72.40; 73.60; 81.15; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  A novel combination of methods is shown to produce semiconducting WS2 thin films with properties close to those of a single crystal. The first step requires the deposition of a very thin Ni layer on a quartz substrate. On top of it an amorphous, sulphur rich, (WS 3+x ) thin film is deposited by reactive rf sputtering. The final annealing step in an argon atmosphere yields 200 nm thick WS2 films. X-ray diffraction shows that the films crystallize in the 2H-WS2 phase and are perfectly oriented with the (002) basal planes parallel to the substrate. Residual W18O49 needles and β-NiS grains are detected by transmission electron microscopy. The dc conductivity and its activation energy have values typical of bulk crystals. The optical absorption spectrum measured at Room Temperature (RT) shows excitonic peaks at the same energies as in a single crystal. RT photoconductivity measured as a function of wavelength is shown to result from interband transitions.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1432-0630
    Keywords: 72.40 ; 73.60 ; 81.15 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A novel combination of methods is shown to produce semiconducting WS2 thin films with properties close to those of a single crystal. The first step requires the deposition of a very thin Ni layer on a quartz substrate. On top of it an amorphous, sulphur rich, (WS3 +x ) thin film is deposited by reactive rf sputtering. The final annealing step in an argon atmosphere yields 200 nm thick WS2 films. X-ray diffraction shows that the films crystallize in the 2H-WS2 phase and are perfectly oriented with the (002) basal planes parallel to the substrate. Residual W18O49 needles andβ-NiS grains are detected by transmission electron microscopy. The dc conductivity and its activation energy have values typical of bulk crystals. The optical absorption spectrum measured at Room Temperature (RT) shows excitonic peaks at the same energies as in a single crystal. RT photoconductivity measured as a function of wavelength is shown to result from interband transitions.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 51-52 (May 1996), p. 335-340 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 1 (1982), S. 549-559 
    ISSN: 0392-6737
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si presenta uno studio mediante fotoemissione con luce di sincrotrone degli stati nella banda di valenza superiore di quattro composti con struttura del tipo ZrSe3: ZrS3, ZrSe3, ZrTe3 e HfSe3. Gli spettri dei seleniuri e del solfuro presentano una struttura caratteristica a cinque picchi in accordo con le densità degli stati di ZrSe3 calcolate da Myronet al. e de Bullett. La natura di questi picchi è causata dall’azione combinata della reibridizzazione di orbitali di anioni accoppiati e dell’ibridizzazione di stati di anioni non accoppiati con, stati cationici. Lo spettro di ZrTe3 presenta solo tre picchi che appaiono collegati a tre dei picchi spettrali, osservati per i seleniuri e per il solfuro. Le differenze fra gli spettri del telloruro e quelli dei seleniuri e del solfuro sono discusse in relazione alla grande distanza fra anioni accoppiati e cationi primi vicini nel telloruro.
    Abstract: Резюме мы предлагаем результаты исследований фотоэмиссии синхротронного излучения для верхних состояний валентной зоны для четырех соединений со структурой типа ZrSe3: ZrS3, ZrSe3, ZrTe3 и HfSe3. Спекты сельфида и селенида обнаруживают структуру с пятью пиками, что согласуется с вычисленной Мироном и др. и Булле плотностью состояний для ZrSe3. Природа этих особенностей связана с взаимодействием между перегибридизацией орбиталей спаренных анионов и гибридизацией орбиталей не спаренных анионов с катионными состояниями. Спектр ZrTe3 обнаруживает только три пика, которые, по-видимому, связаны с тремя наблюденными спектральными особенностями сульфида и селенида. Различия между спектрами сульфида и селенида и спектрами теллурида сбсуждаются в терминан очень большого расстояния между спаренными анионами и соседними катионами в теллуриде.
    Notes: Summary We present a synchrotron radiation photoemission study of the upper-valence-band states of four ZrSe3-structure compounds: ZrS3, ZrSe3, ZrTe3 and HfSe3. The sulphide and selenide spectra exhibit a characteristic five-peak structure in agreement with the calculated ZrSe3 density of states by Myronet al. and by Bullett. The nature of these features is established by an interplay between the rehybridization of paired-anion ligand orbitals and the hybridization of unpaired-anion states with cation states. The spectrum of ZrTe3 exhibits only three peaks that appear related to three of the sulphide and selenide spectral features. The differences between the sulphide, selenide spectra and the telluride spectra are discussed in terms of the very large distance between pairedanion ligands and neighbour cations in the latter compound.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 4 (1984), S. 141-152 
    ISSN: 0392-6737
    Keywords: Optical properties and materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Sono state studiate, mediante la tecnica della termoriflettanza, le principali strutture dello spettro interbanda dei cristalli Ti1−x Hf x Se2 (0≤x≤0.3 ex=1), fra 1 e 9 eV. Si sono così ottenute nuove indicazioni circa la corrispondenza fra gli spettri interbanda del TiSe2 e dell'HfSe2. Si riportano in dettaglio e discutono i dati di termoriflettanza a valori intermedi dix con evidenza di possibili effetti di «bowing». Non sono stati osservati apprezzabili effetti della transizione di fase a 200 K ad energie superiori a 2 eV.
    Abstract: Резюме Исследуются главные особенности междузонных спектров кристаллов Ti1−xHf x Se2 (0≤x≤0.3 иx=1) с помощью техники термоотражения в области от 1 до 9 эВ. Приводятся новые данные о соответствии между междузонными спектрами TiSe2 и HfSe2. Подробно обсуждаются данные при промежуточных значенияхx. Не наблюдаются заметные эффекты фазового перехода при 200 К в TiSe2 при энергиях выше 2 эВ.
    Notes: Summary The main structures of interband spectra of Ti1−x Hf x Se2 crystals (0≤x≤0.3 andx=1) have been investigated by means of thermoreflectance from 1 to 9 eV. New indications about the correspondence of the interband spectra of TiSe2 and HfSe2 are given. Detailed data at intermediate stoichiometries, which give also evidence of possible bowing effects, are reported and discussed. No relevant effect of the 200 K phase transition in TiSe2 is observable above 2 eV.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 11 (1989), S. 455-466 
    ISSN: 0392-6737
    Keywords: Infra-red and Raman spectra and scattering
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro si è condotta una completa analisi, dal punto di vista delle polarizzazioni, dello spettro Raman del GaS, per energie di eccitazione al di sotto del «gap» indiretto. Al fine di identificare le combinazioni di secondo ordine e i modi proibiti indotti da difetti, sono state eseguite anche misure di trasmittanza e riflettanza nell'infrarosso. L'impiego di tutte le possibili regole di selezione, applicate sia agli spettri Raman sia a quelli IR, ha permesso sempre di individuare i punti di simmetria dei modi coinvolti nello spettro Raman e, quando possibile, di assegnare le principali strutture non di Γ a modi dei puntiM oK. Si è cosí pervenuti a numerose nuove attribuzioni, contestando anche alcune precedenti assegnazioni, basate solo su studi separati degli spettri Raman o IR.
    Abstract: Резюме Предлагается поляризационный анализ спектра комбинацонного рассеяния в GaS для энергий возбуждения ниже непрямой запрещеннои зоны. Чтобы определить комбинации втрого порядка и дефект, индуцированный запрешеенным модами, которые появляются в спектрах, помимо шести хорошо известных Γ-фононов, вяшолняются также измерения пропускания и отражения инфракрасного излучения дляE⊥c иE∼c. Все имеюэиеся правила отбора применяются к данным по комбинационному рассеянию и к инфракрасым данным, что позволяет идентифицировать точки высокой симметрии для фононов, фигурирующие в рассеянии и, по возможности, описать главные не-Γ-структуры спектров. Этот анализ позволяет получить некоторые новые признаки, основанные на раздельном исследовании спектров комбинационного рассеяния и инфракрасных спектров.
    Notes: Summary A complete polarization analysis of the GaS Raman spectrum, for excitation energies below the indirect energy gap, is reported. In order to assign second-order combinations and defect-induced forbidden modes, that appear in the spectra besides the six well-known Γ-phonons, also IR transmittance and reflectance measurements, for bothE⊥c andE‖c, have been performed. All the available selection rules are applied to both Raman and IR data, allowing to identify the high-symmetry points of phonons involved in the scattering and, when possible, to ascribe the main non-Γ structures of the spectra to the knownK andM point modes. This analysis brings to several new attributions, also ruling out some previous assignments, based on the separate study of either Raman or IR spectra.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd.
    Gerodontology 20 (2003), S. 0 
    ISSN: 1741-2358
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Objectives: This study was designed to evaluate the influence of age and denture use on the size of arches and residual ridges in edentulous patients. Design: At two nursing homes, maxillary and mandibular stone casts of 302 fully edentulous patients were utilized to measure the size of the arches and residual ridges, according to age and use of complete dentures. Age cohorts were divided into three groups; 60–69, 70–79, and 80–89 years old. Two hundred and forty-nine denture wearers used complete dentures for at least 2 years before examinations. Fifty-three non-denture users had never worn removable prostheses. Chi-square analysis (p〈0.05) was used to establish the possible relations between the linear values and the size indexes of the ridges and arches and the two examined parameters: age and denture wear. Results: Young old patients possessed edentulous structures that were not significantly larger than elderly old patients in both the maxilla and the mandible. Non-denture users had significantly bigger arches and ridges in both edentulous jaws than denture users. Conclusions: Young old, non-denture users tended to have bigger residual edentulous tissues compared to elderly old patients who used complete dentures.
    Type of Medium: Electronic Resource
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