Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 131-133 (Oct. 2007), p. 21-26
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
In present work temperature stable conductivity is considered for neutron-dopedFZ silicon with point radiation defects. It was shown that divacancy formed after electronirradiation allow to increase resistivity of silicon at room temperature, what lead to lessvariation of conductivity in a range of temperatures 20-160C. Discrepancy betweenexperimental and theoretical data was evaluated and corrected with introduction in themodel deep level center Ec-0.6eV. As result of investigation power resistors wereelaborated with 10% deviation from nominal value within the range of temperatures
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.21.pdf
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