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  • 1
    Electronic Resource
    Electronic Resource
    Strain, alloy composition, and lattice relaxation measured by optical-absorption spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3393-3398 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The validity of optical absorption (OA) as a technique for the measurement of strain e11, alloy composition x, and relaxation in InxGa1−xAs epilayers on InP has been examined by comparison with similar measurements by double-crystal x-ray diffraction (DCXD). Provided that the strain arising from differences in the thermal contraction of the substrate and epilayer are taken into account, measurements of strain by OA show good agreement with DCXD results, with a dispersion of Δe11=±0.27×10−3. Comparison of alloy compositions given by the two techniques shows similarly good agreement, with a dispersion in the values of x of less than Δx=±0.7%. OA may also be used to determine lattice relaxation. The degree of uncertainty in the measurement of this parameter increases as lattice match is approached and decreases as the lattice relaxes. Our studies indicate that OA may be used as an independent technique to evaluate strain, alloy composition, and the degree of lattice relaxation in InxGa1−xAs epilayers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358629
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of silicon delta-doped gallium arsenide using the Shubnikov–de Haas effect and theoretical modeling (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3583-3588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a detailed study of electron sub-band occupancies and saturation effects in silicon delta-doped gallium arsenide samples, using Hall and Shubnikov–de Haas (SdH) measurements in conjunction with numerical modeling. This study extends previous work in two respects. First, the samples, produced by molecular beam epitaxy with a nominal delta doping density of 1×1013 cm−2, were examined over a wide range of growth temperature (395–710 °C) to allow the influence of broadening of the doping profile to be examined. Second, the numerical modeling method, based on a self-consistent solution of Poisson's and Schrödinger's equations, included directly the influence of DX-like donor levels, located at 200 meV above the conduction band edge. Excellent agreement with the individual sub-band occupancies determined by SdH was found for all samples up to a growth temperature of 605 °C, with the total silicon doping density kept constant and dopant broadening as the only adjustable parameter in the fit. Despite the evidence for inclusion of DX-like donor levels based on our modeling, all samples showed only a weak persistent photoconductivity effect. This is in contrast to uniformly doped bulk GaAs, indicating the different nature of the DX level in two and three dimensional doping. Above 605 °C it was not possible to model sub-band occupancies using a constant total doping density, showing that another deactivation mechanism such as autocompensation becomes important.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357418
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  • 3
    Electronic Resource
    Electronic Resource
    An investigation of the electrical and chemical properties of intimate metal-InyAl1−yAs(100) interfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2481-2488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and chemical properties of the interfaces formed at room temprature, between the surface of epitaxial n-type InyAl1−yAs(100) and a selection of metals have been studied. Highly ideal Au, Ag, Cu, and In diodes exhibiting the highest reported barriers (0.78–0.91 eV), measured by the current-voltage (I-V) technique, have been obtained by forming intimate contacts on atomically clean, lattice matched, molecular beam epitaxy grown InyAl1−yAs/InP(100). The formation of Au- and In-InyAl1−yAs interfaces has been investigated using x-ray photoemission spectroscopy, showing that in both cases the Fermi level is pinned at the surface prior to metal deposition. The deposition of both In and Au overlayers initiated the selective removal of As from the interface to segregate on the metal surface; however the presence of these metals on the semiconductor surface produced no further Fermi shift. These observations, in conjunction with the barrier heights measured by the I-V technique, are discussed in the context of currently supported models of Schottky barrier formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356246
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  • 4
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of selectively delta-doped strained InxGa1−xAs/GaAs quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2627-2632 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here an investigation of selectively delta-doped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by self-consistently solving the Schrödinger and Poisson equations and the calculations revealed a systematic variation of the band structure as the delta sheet moved away from the center of the well to the edge and finally to the barrier. The results were found to be in agreement with our photoluminescence (PL) measurements. For center-doped samples, band-gap renormalization was found to be strong from the PL data, and our realistic random-phase approximation calculation for the heavily doped sample is in excellent agreement with the PL data. The radiative lifetimes were measured to be around 450 ps for all the samples, and surprisingly they vary very little from sample to sample although the wave-function overlap was considerably different for some samples. We also report Shubnikov–de Haas (SdH) measurements on the two barrier doped cases. For the heavily doped sample (A12132), two oscillation signals were detected and they were identified as two upper subbands. The measured electron densities were in very good agreement with the self-consistent calculation. Illumination did not make any difference to the measured densities. For the low-doped sample (A12025), however, the measured electron density before illumination is much smaller than the calculated, and illumination was found to make a large difference. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361133
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  • 5
    Electronic Resource
    Electronic Resource
    In situ reflectance anisotropy studies of AlxGa1−xAs layers grown on GaAs(001) by molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3115-3120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflectance anisotropy spectroscopy was used to examine the surfaces of AlxGa1−xAs layers grown on GaAs(001) by molecular beam epitaxy, where the Al mole fraction was varied across the whole composition range x=(0.0,0.25,0.50,0.75,1.0). All surfaces were also independently characterized using reflection high-energy electron diffraction, and were found to exhibit a c(4×4) reconstruction. After initial changes in the spectra were observed on depositing very thin layers (≤20 monolayers), in the intermediate thickness range a regime was entered in which strong optical interference effects appeared. These effects are accurately accounted for using a four-media model. For thicker layers (≥8000 monolayers), interference effects were seen to diminish and spectra representative of the surfaces of bulk AlxGa1−xAs were obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358663
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  • 6
    Electronic Resource
    Electronic Resource
    Industrial Cogeneration (1978)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Environment and Resources 3 (1978), S. 313-356 
    Details
    ISSN: 0362-1626
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.eg.03.110178.001525
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  • 7
    Electronic Resource
    Electronic Resource
    Future Energy Savings in U.S. Housing (1983)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Environment and Resources 8 (1983), S. 269-332 
    Details
    ISSN: 0362-1626
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.eg.08.110183.001413
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  • 8
    Electronic Resource
    Electronic Resource
    An End-Use Oriented Global Energy Strategy (1985)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Environment and Resources 10 (1985), S. 613-688 
    Details
    ISSN: 0362-1626
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.eg.10.110185.003145
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  • 9
    Electronic Resource
    Electronic Resource
    Materials, Affluence, and Industrial Energy Use (1987)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Environment and Resources 12 (1987), S. 99-144 
    Details
    ISSN: 0362-1626
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.eg.12.110187.000531
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  • 10
    Electronic Resource
    Electronic Resource
    Aeroderivative Turbines for Stationary Power (1988)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Environment and Resources 13 (1988), S. 429-489 
    Details
    ISSN: 0362-1626
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.eg.13.110188.002241
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