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Interaction of implanted181Hf/181Ta impurities with radiation induced lattice defects in platinum

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Zeitschrift für Physik B Condensed Matter

Abstract

Radioactive181Hf ions were implanted into polycristalline platinum foils at 293 K. The radiation damage produced during the implantations was detected by subsequent time-differential perturbed-angular-correlation measurements of theγ-radiation emitted by the181Hf daughter181Ta. After annealing of the samples between 630 K and 850 K a large fraction of the implanted impurities interacts with well defined nearby lattice defects, which are assumed to be vacancy loops.

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Authors and Affiliations

  1. Institut für Strahlen- und Kernphysik, Universität Bonn, Nußallee 14-16, D-5300, Bonn 1, Federal Republic of Germany

    Horst G. Müller, U. Pütz, K. Krusch & K. Freitag

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  1. Horst G. Müller
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  2. U. Pütz
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  3. K. Krusch
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  4. K. Freitag
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Müller, H.G., Pütz, U., Krusch, K. et al. Interaction of implanted181Hf/181Ta impurities with radiation induced lattice defects in platinum. Z Physik B 35, 327–332 (1979). https://doi.org/10.1007/BF01332693

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  • DOI: https://doi.org/10.1007/BF01332693

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