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Time-differential Mößbauer spectroscopy of57Fe in silicon after Coulomb excitation by pulsed heavy ion beams

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Zeitschrift für Physik B Condensed Matter

Abstract

Coulomb excited57Fe was implanted into high purity silicon at room temperature. Inbeam time-differential Mößbauer spectra were measured with resonance counters. An approximation of the classical theory for reasonantly scattered radiation was derived and applied to the analysis of the data. There is no indication for nonstationary effects during the lifetime (140 ns) of the 14.4 keV state.

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Authors and Affiliations

  1. Institut für Kernphysik, Technische Hochschule Darmstadt, Hochschulstrasse 2, D-6100, Darmstadt 11, Federal Republic of Germany

    S. Laubach, P. Schwalbach, M. Hartick, E. Kankeleit & G. Klingelhöfer

  2. Hahn-Meitner-Institut für Kernforschung Berlin GmbH, Glienicker Strasse 100, D-1000, Berlin 39, Germany

    R. Sielemann

Authors
  1. S. Laubach
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  2. P. Schwalbach
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  3. M. Hartick
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  4. E. Kankeleit
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  5. G. Klingelhöfer
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  6. R. Sielemann
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Laubach, S., Schwalbach, P., Hartick, M. et al. Time-differential Mößbauer spectroscopy of57Fe in silicon after Coulomb excitation by pulsed heavy ion beams. Z. Physik B - Condensed Matter 75, 173–178 (1989). https://doi.org/10.1007/BF01307997

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  • DOI: https://doi.org/10.1007/BF01307997

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