Abstract
The antimony doping in SnO2 thin films prepared by the sol-gel dip-coating method has been studied using two characterization techniques. In order to determine the actual doping level directly in the deposited layers, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) have been used. We found that this doping level is systematically lower than expected from the starting solutions composition, and that two oxidation states are present: Sb3+ and Sb5+. As the antimony content increases, there is a competition between Sb5+ and Sb3+ species.
The SnO2: Sb thin films have also been observed by transmission electron microscopy (TEM), showing that the measured mean size of crystallites decreases as the Sb content increases in the oxide. No precipitates of either Sn or Sb oxides (other than SnO2) could be detected.
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Terrier, C., Chatelon, J., Roger, J. et al. Analysis of Antimony Doping in Tin Oxide Thin Films Obtained by the Sol-Gel Method. Journal of Sol-Gel Science and Technology 10, 75–81 (1997). https://doi.org/10.1023/A:1018388306674
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DOI: https://doi.org/10.1023/A:1018388306674