Abstract
We have investigated theoretically the carrier concentrations and Fermi-levels in extrinsic semiconductors (both n- and p-type), taking into account the existence of holes in valence band for n-type semiconductors and of electrons in conduction band for p-type systems. To indicate the quantitative implications of the theoretical analyses, we have performed some numerical calculations with respect to n-type germanium and explored the physical conditions under which we would be required to take account of the role of carriers excited over the band gap, in evaluating the statistics of carriers in extrinsic semiconductors.
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The author is grateful to Professors H. N.Bose, G.Bandopadhyaya and G. B.Mitra for their interest and encouragement.
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Roy, C.L. Carrier concentrations and Fermi-levels in extrinsic semiconductors. Czech J Phys 27, 769–776 (1977). https://doi.org/10.1007/BF01589318
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DOI: https://doi.org/10.1007/BF01589318