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Observation of secondary particles grown on crystal surfaces of silicon carbide

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Abstract

Pressureless sintering of ultrafine SiC powder containing a large amount of free Si was carried out with the aid of boron. Epitaxial growth of secondary particles was observed by scanning electron microscopy (SEM) on some hexagonal-shaped surfaces of β-SiC cube-octahedra. The other hexagonal-shaped surfaces were seen to be entirely smooth. The two-fold symmetry of the [100] axes for the appearance of secondary particles certainly reflects the polarity of β-SiC. When the sintering was repeated again, coalescence growth of secondary particles was remarkable on the former surfaces and layered growth was predominant on the latter surfaces.

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Authors and Affiliations

  1. Department of Physics, Meijo University, Tenpaku-ku, 468, Nagoya, Japan

    Y. Ando

  2. Faculty of Liberal Arts, Nagasaki University, 852, Nagasaki, Japan

    H. Iwanaga

Authors
  1. Y. Ando
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  2. H. Iwanaga
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Ando, Y., Iwanaga, H. Observation of secondary particles grown on crystal surfaces of silicon carbide. JOURNAL OF MATERIAL SCIENCE 28, 5722–5724 (1993). https://doi.org/10.1007/BF00365172

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  • DOI: https://doi.org/10.1007/BF00365172

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