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Oxidation kinetics of low-oxygen silicon carbide fiber

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Abstract

The effect of partial pressure and temperature on the oxidation rate of low-oxygen silicon carbide fiber (Hi-Nicalon) has been investigated. The initial oxidation rate was described by a two-dimensional disc contracting formula for reaction control, and the activation energy was 155 kJ/mol. The rate at the later stage of oxidation obeyed the equation for diffusion control, and the activation energy was 109 kJ/mol. Both the rate constants were proportional to oxygen partial pressure. The diffusion species through the SiO2 film are considered to be oxygen molecules.

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Authors and Affiliations

  1. Department of Metallurgy and Materials Science, College of Engineering, Osaka Prefecture University, 1-1, Gakuen-cho, Sakai, Osaka, 599-8531, Japan

    T. Shimoo & K. Okamura

  2. Osaka Prefecture University, 1-1, Gakuen-cho, Sakai-shi, Osaka, 599-8531, Japan

    F. Toyoda

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  1. T. Shimoo
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  2. F. Toyoda
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  3. K. Okamura
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Shimoo, T., Toyoda, F. & Okamura, K. Oxidation kinetics of low-oxygen silicon carbide fiber. Journal of Materials Science 35, 3301–3306 (2000). https://doi.org/10.1023/A:1004883607913

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