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Effect of ultraviolet illumination on the charge trapping behaviour in SiNx/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapour deposition

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Optical Electronics Laboratory, Korea Institute of Science and Technology, PO Box 131, 130-65, Cheongryang, Seoul, Korea

    C. H. Kim, I. K. Han, J. I. Lee & K. N. Kang

  2. Physics Department, Seoul National University, 151-742, Seoul, Korea

    S. D. Kwon & B. Choe

  3. Physics Department, Yonsei University, 120-749, Seoul, Korea

    H. L. Park

  4. Department of Electronic Engineering, Ajou University, 440-749, Suwon, Korea

    J. Her & H. Lim

Authors
  1. C. H. Kim
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  2. I. K. Han
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  3. J. I. Lee
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  4. K. N. Kang
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  5. S. D. Kwon
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  6. B. Choe
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  7. H. L. Park
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  8. J. Her
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  9. H. Lim
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Kim, C.H., Han, I.K., Lee, J.I. et al. Effect of ultraviolet illumination on the charge trapping behaviour in SiNx/InP metal-insulator-semiconductor structure provided by plasma enhanced chemical vapour deposition. J Mater Sci Lett 13, 563–565 (1994). https://doi.org/10.1007/BF00592609

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  • DOI: https://doi.org/10.1007/BF00592609

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