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Thermoreflectance of the GaSxSe1−x mixed crystals between 3 and 9 eV

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Il Nuovo Cimento D

Summary

The thermoreflectance spectra between 3 and 9 eV have been measured for a series of GaSxSe1−x mixed crystals. The samples were single-crystal platelets grown from the vapour by the chemical-transport method. The measurements were performed with a nonpolarized light beam propagating approximately along the anisotropy crystal axis and the temperature was modulated around 65 K. Many structures in the reflectance spectra have been analysed in their dependence on the sulphur concentration in the mixed crystals. On this basis a detailed discussion of the optical spectra in GaS and in GaSe beyond the fundamental edge is given, and new information concerning the electronic energy levels is obtained both for these compounds and for InSe, which has an analogous crystal structure.

Riassunto

Sono stati misurati gli spettri di termoriflettanza tra 3 e 9 eV per una serie di cristalli misti GaSxSe1−x. I campioni erano lastrine monocristalline cresciute dalla fase vapore con il metodo del trasporto chimico. Le misure sono state effettuate con radiazione non polarizzata propagantesi all’incirca lungo l’asse di anisotropia dei cristalli, mentre la modulazione in temperatura è stata eseguita attorno a 65 K. Molte strutture degli spettri di riflettività sono state analizzate nella loro dipendenza dalla concentrazione di zolfo nei cristalli misti. Su questa base si è data una approfondita discussion degli spettri ottici di GaS e GaSe oltre la soglia fondamentale, e si sono ottenute nuove informazioni riguardanti i livelli elettronici di energia sia per questi composti che per l’InSe, che ha struttura cristallina analoga.

Резюме

Были измерены спектры термоотражения в области между 3 и 9 эВ для ряда смешанных GaS x Se x−1 кристаллов. Образцы представляют монокристал-лические пластинки, вырращенные из пара химическнм методом. Измерения проведены с неполяризованным светвым пучком, распространяющимся приблизителщимся приблизительно рдоль оси анизотропии кристалла. Температура модулируется вблизи 65 К. Анализи-руются некоторы в спектрах отражения в зависимости от концентрации серы в смешанных кристаллах. Прородится подробное обсуждение оптических спектров в GaS и GaSe ниже основного края. Получается новая информадия об электронных энергетических уровнях для указанных соединений и для InSe, которые имеют аналогичную кристаллическую структуру.

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Author notes

  1. A. Rizzo

    Present address: Istituto di Fisica, Università di Lecce, and Gruppo Nazionale di Struttura della Materia del CNR, Lecce, Italia

Authors and Affiliations

  1. Istituto di Fisica dell’Università, Bari

    A. M. Mancini & A. Rizzo

  2. Gruppo Nazionale di Struttura della Materia del CNR, Bari, Italia

    A. M. Mancini & A. Rizzo

  3. Istituto di Struttura della Materia dell’Università, Messina

    R. Girilanda

  4. Gruppo Nazionale di Struttura della Materia del CNR, Messina, Italia

    R. Girilanda

  5. Istituto di Fisica Generale dell’Università, Pavia

    G. Guizzetti & L. Nosenzo

  6. Gruppo Nazionale di Struttura della Materia del CNR, Pavia, Italia

    G. Guizzetti & L. Nosenzo

  7. Istituto di Fisica dell’Università, Pisa

    E. Doni

  8. Gruppo Nazionale di Struttura della Materia del CNR, Pisa, Italia

    E. Doni

  9. Istituto di Fisica Sperimentale del Politecnico, Torino, Italia

    E. Reguzzoni

  10. Gruppo Nazionale di Struttura della Materia del CNR, Pavia, Italia

    E. Reguzzoni

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  1. A. M. Mancini
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Mancini, A.M., Rizzo, A., Girilanda, R. et al. Thermoreflectance of the GaSxSe1−x mixed crystals between 3 and 9 eV. Nouv Cim D 1, 751–777 (1982). https://doi.org/10.1007/BF02451067

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  • DOI: https://doi.org/10.1007/BF02451067

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