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Optical investigations of GaAs/Ga1−x Al x As Quantum wells grown by molecular-beam epitaxy

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Il Nuovo Cimento D

Summary

Measurements of photoluminescence, excitation photoluminescence and reflectance are performed at various temperatures on a series of GaAs/Ga1−x Al x As quantum well structures grown by molecularbeam epitaxy. The selective photoluminescence data of the GaAs buffer layers are analysed in order to correlate the optical properties with the growth conditions. The Stokes shift of the excitation emission line from quantum wells is investigated under various excitation conditions. A considerable decrease of the Stokes shift is observed in the case of nonresonant and intense excitations. Also the extrinsic photoluminescence, as well as its temperature dependence, are interpreted. In addition, the temperature effects on both the bulk and quantum well spectra are shown to clarify the excitation features and the contribution of the interband transitions.

Riassunto

Sono state effettuate misure di fotoluminescenza, di fotoeccitazione e di riflettività, a varie temperature, su una serie di strutture a pozzi quantici GaAs/Ga1−x Al x As, cresciute con epitassia da fasci molecolari. I risultati della fotoluminescenza emessa nello strato depositato di GaAs sono analizzati e le sue proprietà ottiche sono collegate alle condizioni di crescita. Lo spostamento Stokes della riga di emissione dell'eccitone nel pozzo quantico è studiato in dipendenza delle varie condizioni di eccitazione. Si trova una considerevole diminuzione dello spostamento Stokes nel caso di eccitazione intensa e non risonante. Anche la fotoluminescenza estrinseca e la sua dipendenza dalla temperatura sono interpretate. Inoltre si mostra che gli effetti di temperatura su entrambi gli spettri del cristallo GaAs e del pozzo quantico chiariscono i ruoli del contributo eccitonico e delle transizioni interbanda.

Резюме

Проведены измерения фотолюминесценции, фотолюминесценции возбуждения и козффициента отражения при различных температурах на образцах структур квантовых ям GaAs/Ga1−x Al x As, выраўенных с помощью эпитаксии молекулярного пучка. Анализируются некоторые данные по фотолюминесценции для буферных слоев GaAs для определения корреляции между оптическими свойствами и условиями выращивания. При различных условиях возбуждения исследуется сдвит Стокса линии испускания экситона на квантовых ямах. Наблюдается эаметное уменьшение сдвига Стокса в случае нерезонанснопо н интенсивного возбуждений. Также интерпретируются примесная фотолюминесценция и ее температурная зависимость. Показывается, что влияние температуры на обьемный спектр и спектр квантовых ям проясняет экситонные особенности и вклад межзонных переходов.

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Author notes

  1. R. Cingolani

    Present address: Department of Physics, Bari University, Via Amendola 173, 70100, Bari, Italy

Authors and Affiliations

  1. Scuola Normale Superiore, Piazza dei Cavalieri 7, 56100, Pisa, Italia

    Y. Chen & R. Cingolani

  2. Laboratoire de Physique du Solide et Energie Solaire, Centre National de la Recherche Scientifique, Sophia Antipolis, 06560, Valbonne, France

    J. Massies, G. Neu, F. Turco & J. C. Garcia

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  1. Y. Chen
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  4. G. Neu
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  6. J. C. Garcia
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Chen, Y., Cingolani, R., Massies, J. et al. Optical investigations of GaAs/Ga1−x Al x As Quantum wells grown by molecular-beam epitaxy. Il Nuovo Cimento D 10, 1093–1114 (1988). https://doi.org/10.1007/BF02450207

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  • DOI: https://doi.org/10.1007/BF02450207

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