Skip to main content
SpringerLink
Log in

Exciton migration and recombination enhancement in GaAs/AlAs single quantum wells under resonant excitation

  • Published:
Il Nuovo Cimento D

Summary

Exciton dynamics including thermalisation, radiative recombination and migration in growth-interrupted and hydrogen-passivated GaAs/AlAs single quantum wells have been investigated under non-resonant and resonant excitation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Refererences

  1. Damen T. C., Shah J., Oberli D. Y., Chemla D. S., Cunningham J. E. andKuo J. M.,Phys. Rev. B,42 (1990) 7434.

    Article  ADS  Google Scholar 

  2. Andreani L. C., Tassone F. andBassani F.,Solid State Commun.,77 (1991) 641.

    Article  Google Scholar 

  3. Feldmann J., Peter G., Gobel E. O., Dawson P., Moore K., Foxon T. andElliot R. J.,Phys. Rev. Lett.,59 (1987) 2337.

    Article  ADS  Google Scholar 

  4. Yu H., Mookherjee P. B., Murray R. andYoshinaga A.,J. Appl. Phys.,77 (1995) 1217.

    Article  ADS  Google Scholar 

  5. Martinez-Pastor J., Vinattieri A., Carraresi L., Colocci M., Roussignol Ph. andWeimann G.,Phys. Rev. B,47 (1993) 10456.

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Interdisciplinary Research Centre for Semiconductor Materials The Blackett Laboratory, Imperial College, London, UK

    H. Yu & R. Murray

Authors
  1. H. Yu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. Murray
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yu, H., Murray, R. Exciton migration and recombination enhancement in GaAs/AlAs single quantum wells under resonant excitation. Il Nuovo Cimento D 17, 1791–1795 (1995). https://doi.org/10.1007/BF02457282

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02457282

PACS 78.47

PACS 78.66.Fd

PACS 01.30.Cc

Search

Navigation