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Buffer layers for high-T c thin films on sapphire

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Abstract

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited onR-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O7−δ (YBCO) thin films. An ion beam channeling minimum yield of ∼3% was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films onR-plane sapphire. HighT c andJ c were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were ∼4 mω at 77 K and 25 GHz.

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Authors and Affiliations

  1. Los Alamos National Laboratory, Superconductivity Technology Center, 87545, Los Alamos, New Mexico

    X. D. Wu, S. R. Foltyn, R. E. Muenchausen & D. W. Cooke

  2. Neocera, Inc., 335 Paint Branch Drive, 20742, College Park, Maryland

    A. Piqué

  3. David Sarnoff Research Center, CN53OO, 08543-5300, Princeton, New Jersey

    D. Kalokitis, V. Pendrick & E. Belohoubek

Authors
  1. X. D. Wu
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  2. S. R. Foltyn
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  3. R. E. Muenchausen
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  4. D. W. Cooke
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  5. A. Piqué
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  6. D. Kalokitis
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  7. V. Pendrick
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  8. E. Belohoubek
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Wu, X.D., Foltyn, S.R., Muenchausen, R.E. et al. Buffer layers for high-T c thin films on sapphire. J Supercond 5, 353–359 (1992). https://doi.org/10.1007/BF00618135

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  • DOI: https://doi.org/10.1007/BF00618135

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