Abstract
The surface resistance of YBa2(Cu1−x Zn x )3O7−δ has been measured in single crystals with oxygen vacancies ranging fromδ=0.03 to 0.15 and for Zn impurity concentrations ofx=0, 0.0015 and 0.0031. Oxygen vacancies in the CuO chains have little influence on the microwave loss untilT c is reduced substantially. However, Zn impurities in the CuO2 plane sites drasticallydecrease the surface resistance, showing that the CuO2 plane conductivity dominates any CuO chain contribution to the microwave properties of YBa2Cu3O7−δ. The reduced microwave loss in the Zn-doped samples mimics the loss observed in state-of-the-art films and indicates that defects must be present in order to achieve the low microwave loss observed in some films. This sensitivity to low levels of defects is a consequence of the rapid increase in the scattering time in YBa2Cu3O7−δ belowT c .
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Bonn, D.A., Zhang, K., Liang, R. et al. Oxygen vacancies, zinc impurities, and the intrinsic microwave loss of YBa2Cu3O7−δ . J Supercond 6, 219–225 (1993). https://doi.org/10.1007/BF00626261
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DOI: https://doi.org/10.1007/BF00626261