Abstract
A novel method of measurement of lasing characteristics for a ring laser diode is proposed without branching of the optical lasing power. The lasing power and the linewidth as a function of the injection current have been measured by detecting the RF power by the terminal voltage change of a ring LD. The linewidth is estimated to be 55 kHz atl=1.75l th.
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Ikeda, M., Maeda, Y. & Murakami, K. Self-detection of lasing characteristics for semiconductor ring laser diodes. Opt Quant Electron 28, 17–23 (1996). https://doi.org/10.1007/BF00578547
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DOI: https://doi.org/10.1007/BF00578547