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Large area InAlAs/InGaAs metal semiconductor metal photodiode with very low dark current and its frequency response

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Abstract

An MBE grown InGaAs metal semiconductor metal (MSM) photodiode (PD) with an InAlAs barrier enhancement layer is reported that has very low dark current and high speed characteristics. The detector using Cr/Au Schottky metal fingers with 4m spacing on a large active area of 300×300m2 shows a low dark current of 38nA at 10V. This corresponds to a dark current density of 0.42pA/m2 and is, to our knowledge, the best dark current ever obtained from a large area InGaAs MSM PD. The device also shows a low capacitance of 0.8pF and a high 3dB bandwidth of 2.4GHz. By fitting the measured frequency response to a model consisting of both RC time and transit time limited responses, we show that the device has an RC time and a transit time limited 3dB bandwidth of 3.0 and 4.9GHz, respectively.

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Authors and Affiliations

  1. School of Electrical Engineering, Seoul National University, San 56-1, Shilim-dong, Gwanak-gu, Seoul, Korea

    J. B. Kim, M. J. Kim & S. J. Kim

  2. Department of Electrical Engineering, Pennsylvania State University, University Park, PA, 16802, USA

    W.-Y. Hwang, D. L. Miller & M. B. Das

  3. Lucent Technologies–Bell Labs and AT&T Research, Holmdel, NJ, 07733, USA

    J. M. M. Rios & L. M. Lunardi

Authors
  1. J. B. Kim
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  2. M. J. Kim
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  3. S. J. Kim
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  4. W.-Y. Hwang
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  5. D. L. Miller
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  6. M. B. Das
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  7. J. M. M. Rios
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  8. L. M. Lunardi
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Kim, J.B., Kim, M.J., Kim, S.J. et al. Large area InAlAs/InGaAs metal semiconductor metal photodiode with very low dark current and its frequency response. Optical and Quantum Electronics 29, 953–959 (1997). https://doi.org/10.1023/A:1018589903010

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  • DOI: https://doi.org/10.1023/A:1018589903010

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