Abstract
The kinetics of structural relaxation in hydrogenated amorphous silicon (a-Si:H) deposited by various methods is investigated by differential scanning calorimetry. The experimental results are used to analyze the nature of the metastable states in a-Si:H and to investigate the relationship between structural relaxation and light-induced metastability (the Staebler-Wronski effect).
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Fiz. Tekh. Poluprovodn. 31, 1449–1454 (December 1997)
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Budaguan, B.G., Aivazov, A.A., Meitin, M.N. et al. Metastability and relaxation processes in hydrogenated amorphous silicon. Semiconductors 31, 1252–1256 (1997). https://doi.org/10.1134/1.1187306
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DOI: https://doi.org/10.1134/1.1187306